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Ohkouchi, Shunsuke, Gomyo, Akiko (1998) Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP. Applied Surface Science, 130. 447-451 doi:10.1016/s0169-4332(98)00099-3

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Reference TypeJournal (article/letter/editorial)
TitleScanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP
JournalApplied Surface Science
AuthorsOhkouchi, ShunsukeAuthor
Gomyo, AkikoAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00099-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900422Long-form Identifiermindat:1:5:9900422:6
GUID0
Full ReferenceOhkouchi, Shunsuke, Gomyo, Akiko (1998) Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP. Applied Surface Science, 130. 447-451 doi:10.1016/s0169-4332(98)00099-3
Plain TextOhkouchi, Shunsuke, Gomyo, Akiko (1998) Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP. Applied Surface Science, 130. 447-451 doi:10.1016/s0169-4332(98)00099-3
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Ohkouchi, Shunsuke, Furuhashi, Takahisa, Gomyo, Akiko, Makita, Kikuo, Suzuki, Tohru (2005) Cross-sectional scanning tunneling microscopy observation of atomic arrangement in triple period-A type ordered AlInAs alloy. Applied Surface Science, 241. 9-13 doi:10.1016/j.apsusc.2004.09.009
Gomyo, A, Miyasaka, F, Hotta, H, Fukagai, K, Kobayashi, K (1998) Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE. Applied Surface Science, 130. 469-474 doi:10.1016/s0169-4332(98)00103-2
An, Toshu, Yoshimura, Masamichi, Ueda, Kazuyuki (1998) Scanning tunneling microscopy on Sn/Si(110) system. Applied Surface Science, 130. 118-122 doi:10.1016/s0169-4332(98)00036-1
Miyake, Koji, Ishida, Masahiko, Shigekawa, Hidemi (1998) Selective chemical reaction of HBO2 molecules on the Si(111)-7×7 surface studied by scanning tunneling microscopy. Applied Surface Science, 130. 78-83 doi:10.1016/s0169-4332(98)00029-4
Demanet, C.M (1998) Scanning force microscopy investigation of ion bombarded InP. Applied Surface Science, 135. 53-58 doi:10.1016/s0169-4332(98)00306-7
Jiang, Chun-Sheng, Nakayama, Tomonobu, Aono, Masakazu (1998) Bias voltage-dependent scanning tunneling microscopy images of a GaAs(110) surface with small Ag clusters. Applied Surface Science, 130. 425-430 doi:10.1016/s0169-4332(98)00095-6
Negoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1998) Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth. Applied Surface Science, 130. 452-456 doi:10.1016/s0169-4332(98)00100-7
Fukuda, T, Ogino, T (1998) Initial oxidation stage of the Ge(100) 2×1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy. Applied Surface Science, 130. 165-169 doi:10.1016/s0169-4332(98)00044-0
Nörenberg, H, Harding, J.H (1999) Formation of highly ordered Ca-overlayers on TiO2(110) surfaces studied by scanning tunneling microscopy and atomistic simulation. Applied Surface Science, 142. 174-176 doi:10.1016/s0169-4332(98)00670-9
Hitosugi, Taro, Hashizume, T, Heike, S, Kajiyama, H, Wada, Y, Watanabe, S, Hasegawa, T, Kitazawa, K (1998) Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface. Applied Surface Science, 130. 340-345 doi:10.1016/s0169-4332(98)00081-6
 
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