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Balat, M, Berjoan, R, Pichelin, G, Rochman, D (1998) High-temperature oxidation of sintered silicon carbide under pure CO2 at low pressure: active–passive transition. Applied Surface Science, 133. 115-123 doi:10.1016/s0169-4332(98)00193-7

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Reference TypeJournal (article/letter/editorial)
TitleHigh-temperature oxidation of sintered silicon carbide under pure CO2 at low pressure: active–passive transition
JournalApplied Surface Science
AuthorsBalat, MAuthor
Berjoan, RAuthor
Pichelin, GAuthor
Rochman, DAuthor
Year1998 (May)Volume133
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00193-7Search in ResearchGate
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Mindat Ref. ID9900512Long-form Identifiermindat:1:5:9900512:8
GUID0
Full ReferenceBalat, M, Berjoan, R, Pichelin, G, Rochman, D (1998) High-temperature oxidation of sintered silicon carbide under pure CO2 at low pressure: active–passive transition. Applied Surface Science, 133. 115-123 doi:10.1016/s0169-4332(98)00193-7
Plain TextBalat, M, Berjoan, R, Pichelin, G, Rochman, D (1998) High-temperature oxidation of sintered silicon carbide under pure CO2 at low pressure: active–passive transition. Applied Surface Science, 133. 115-123 doi:10.1016/s0169-4332(98)00193-7
In(n.d.) Applied Surface Science Vol. 133. Elsevier BV

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Balat, M, Berjoan, R (2000) Oxidation of sintered silicon carbide under microwave-induced CO2 plasma at high temperature: active–passive transition. Applied Surface Science, 161. 434-442 doi:10.1016/s0169-4332(00)00314-7
Balat, M., Flamant, G., Male, G., Pichelin, G. (1992) Active to passive transition in the oxidation of silicon carbide at high temperature and low pressure in molecular and atomic oxygen. Journal of Materials Science, 27. 697-703 doi:10.1007/bf02403882
Paulmier, T, Balat-Pichelin, M, Le Quéau, D, Berjoan, R, Robert, J.F (2001) Physico-chemical behavior of carbon materials under high temperature and ion irradiation. Applied Surface Science, 180. 227-245 doi:10.1016/s0169-4332(01)00351-8
Panerai, Francesco, Helber, Bernd, Chazot, Olivier, Balat-Pichelin, Marianne (2014) Surface temperature jump beyond active oxidation of carbon/silicon carbide composites in extreme aerothermal conditions. Carbon, 71. 102-119 doi:10.1016/j.carbon.2014.01.018
(1998) Conference organisation. Applied Surface Science, 123. doi:10.1016/s0169-4332(98)90325-7
Balat-Pichelin, M., Robert, J.F., Sans, J.L. (2006) Emissivity measurements on carbon–carbon composites at high temperature under high vacuum. Applied Surface Science, 253. 778-783 doi:10.1016/j.apsusc.2006.01.007
Balat-Pichelin, M., Bêche, E. (2010) Atomic oxygen recombination on the ODS PM 1000 at high temperature under air plasma. Applied Surface Science, 256. 4906-4914 doi:10.1016/j.apsusc.2010.03.002
Hildebrandt, S, Kraus, A, Kulla, R, Neddermeyer, H (1999) From active to passive oxidation: O2 on Si(111) 7×7. Applied Surface Science, 141. 294-304 doi:10.1016/s0169-4332(98)00515-7
Kim, H.M, Shibuya, M, Yoshida, A, Kitagawa, M (1998) Gas-phase etching with ClF3 gas at atmospheric pressure and at room temperature – anisotropic etching. Applied Surface Science, 133. 1-4 doi:10.1016/s0169-4332(98)00213-x
Kerdiles, S., Madelon, R., Rizk, R. (2001) Spectroscopic ellipsometry analysis of nanocrystalline silicon carbide obtained at low temperature. Applied Surface Science, 184. 150-155 doi:10.1016/s0169-4332(01)00489-5
Nishiyama, Masayoshi, Mizokuro, Toshiko, Yoneda, Kenji, Kobayashi, Hikaru (1998) Oxidation of silicon by perchloric acid. Applied Surface Science, 133. 287-292 doi:10.1016/s0169-4332(98)00210-4
 
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