Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nishiyama, Masayoshi, Mizokuro, Toshiko, Yoneda, Kenji, Kobayashi, Hikaru (1998) Oxidation of silicon by perchloric acid. Applied Surface Science, 133. 287-292 doi:10.1016/s0169-4332(98)00210-4

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleOxidation of silicon by perchloric acid
JournalApplied Surface Science
AuthorsNishiyama, MasayoshiAuthor
Mizokuro, ToshikoAuthor
Yoneda, KenjiAuthor
Kobayashi, HikaruAuthor
Year1998 (August)Volume133
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00210-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900532Long-form Identifiermindat:1:5:9900532:2
GUID0
Full ReferenceNishiyama, Masayoshi, Mizokuro, Toshiko, Yoneda, Kenji, Kobayashi, Hikaru (1998) Oxidation of silicon by perchloric acid. Applied Surface Science, 133. 287-292 doi:10.1016/s0169-4332(98)00210-4
Plain TextNishiyama, Masayoshi, Mizokuro, Toshiko, Yoneda, Kenji, Kobayashi, Hikaru (1998) Oxidation of silicon by perchloric acid. Applied Surface Science, 133. 287-292 doi:10.1016/s0169-4332(98)00210-4
In(n.d.) Applied Surface Science Vol. 133. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Mizokuro, Toshiko, Tamura, Masafumi, Yuasa, Toshiro, Kobayashi, Takuya, Maida, Osamu, Takakashi, Masao, Kobayashi, Hikaru (2002) Improvement of electrical characteristics of silicon oxynitride layers by a platinum method. Applied Surface Science, 199. 248-253 doi:10.1016/s0169-4332(02)00842-5
Mizokuro, Toshiko, Yoneda, Kenji, Todokoro, Yoshihiro, Kobayashi, Hikaru (1999) Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact. Journal of Applied Physics, 85 (5). 2921-2928 doi:10.1063/1.369633
(1998) Index. Applied Surface Science, 134. 292-294 doi:10.1016/s0169-4332(98)00352-3
Takahashi, Masao, Mizokuro, Toshiko, Nishioka, Yasushiro, Kobayashi, Hikaru (2002) Experimental and theoretical studies on N 1s levels of silicon oxynitride films. Surface Science, 518 (1). 72-80 doi:10.1016/s0039-6028(02)02096-4
Kobayashi, Hikaru, Sakurai, Takeaki, Nishiyama, Masayoshi, Nishioka, Yasushiro (2001) Formation of a SiO2/SiC structure at 203 °C by use of perchloric acid. Applied Physics Letters, 78 (16). 2336-2338 doi:10.1063/1.1364510
Kageshima, Hiroyuki, Shiraishi, Kenji (1998) Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces. Applied Surface Science, 130. 176-181 doi:10.1016/s0169-4332(98)00046-4
(1998) Editorial Board. Applied Surface Science, 125. doi:10.1016/s0169-4332(98)90332-4
(1998) Index. Applied Surface Science, 135. 357-359 doi:10.1016/s0169-4332(98)00361-4
Balat, M, Berjoan, R, Pichelin, G, Rochman, D (1998) High-temperature oxidation of sintered silicon carbide under pure CO2 at low pressure: active–passive transition. Applied Surface Science, 133. 115-123 doi:10.1016/s0169-4332(98)00193-7
(1998) Author index. Applied Surface Science, 123. 757-768 doi:10.1016/s0169-4332(98)90329-4
Majamaa, T, Kilpelä, O, Novikov, S (1998) Fabrication of ultrathin silicon dioxide layers in room temperature by ultrahigh vacuum plasma oxidation. Applied Surface Science, 136. 17-21 doi:10.1016/s0169-4332(98)00329-8
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 22, 2025 17:06:30
Go to top of page