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Yuan, Z.L, Lai, B, Ding, X.M, Hou, X.Y (1998) Auger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces. Applied Surface Science, 134. 69-72 doi:10.1016/s0169-4332(98)00231-1

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Reference TypeJournal (article/letter/editorial)
TitleAuger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces
JournalApplied Surface Science
AuthorsYuan, Z.LAuthor
Lai, BAuthor
Ding, X.MAuthor
Hou, X.YAuthor
Year1998 (September)Volume134
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00231-1Search in ResearchGate
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Mindat Ref. ID9900552Long-form Identifiermindat:1:5:9900552:6
GUID0
Full ReferenceYuan, Z.L, Lai, B, Ding, X.M, Hou, X.Y (1998) Auger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces. Applied Surface Science, 134. 69-72 doi:10.1016/s0169-4332(98)00231-1
Plain TextYuan, Z.L, Lai, B, Ding, X.M, Hou, X.Y (1998) Auger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces. Applied Surface Science, 134. 69-72 doi:10.1016/s0169-4332(98)00231-1
In(n.d.) Applied Surface Science Vol. 134. Elsevier BV

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Lai, B, Ding, X.M, Yuan, Z.L, Zhou, X, Liao, L.S, Zhang, S.K, Yuan, S, Hou, X.Y, Lu, E.D, Xu, P.S, Zhang, X.Y (2000) Synchrotron radiation photoelectron spectroscopy study of ITO surface. Applied Surface Science, 157. 35-38 doi:10.1016/s0169-4332(99)00515-2
Hearne, Sean, Hughes, Greg (1998) Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100) surfaces. Applied Surface Science, 123. 176-180 doi:10.1016/s0169-4332(97)00508-4
Xu, Q.J., Ding, X.M., Hou, X.Y., Wang, Xun (1996) Nitridation of GaAs surfaces stimulated by nitrogen glow discharge. Applied Surface Science, 104. 468-471 doi:10.1016/s0169-4332(96)00188-2
Passeggi, M.C.G, Vaquila, I, Ferrón, J (1998) Auger electron spectroscopy analysis of the first stages of thermally stimulated oxidation of GaAs(100). Applied Surface Science, 133. 65-72 doi:10.1016/s0169-4332(98)00013-0
Yuan, Z. L., Ding, X. M., Lai, B., Hou, X. Y., Lu, E. D., Xu, P. S., Zhang, X. Y. (1998) Neutralized (NH4)2S solution passivation of III–V phosphide surfaces. Applied Physics Letters, 73 (20). 2977-2979 doi:10.1063/1.122649
Mitchell, C.E.J., Hill, I.G., McLean, A.B., Lu, Z.H. (1996) Sulfur passivated InP(100): surface gaps and electron counting. Applied Surface Science, 104. 434-440 doi:10.1016/s0169-4332(96)00183-3
Ding, X.M., Yuan, Z.L., Hu, H.T., Li, Z.S., Chen, Y.F., Chen, X.Y., Cao, X.A., Hou, X.Y., Wang, Xun, Lu, E.D., Xu, S.H., Xu, P.S., Zhang, X.Y. (1997) Synchrotron radiation photoemission study of S-passivated GaAs surfaces. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 133 (1). 90-93 doi:10.1016/s0168-583x(97)00468-0
Arabczyk, W., Müssig, H.-J., Dąbrowski, J., Moszyński, D., Hinrich, S. (1998) Separation of the bulk and surface components in Auger electron spectroscopy. Applied Surface Science, 135. 59-64 doi:10.1016/s0169-4332(98)00303-1
Chen, M, Wang, X, Yu, Y.H, Pei, Z.L, Bai, X.D, Sun, C, Huang, R.F, Wen, L.S (2000) X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films. Applied Surface Science, 158. 134-140 doi:10.1016/s0169-4332(99)00601-7
(1998) Index. Applied Surface Science, 134. 292-294 doi:10.1016/s0169-4332(98)00352-3
(1998) Index. Applied Surface Science, 134. 295-304 doi:10.1016/s0169-4332(98)00353-5
 
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