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Hatanaka, Y., Niraula, M., Aoki, Y., Aoki, T., Nakanishi, Y. (1999) Surface processing of CdTe compound semiconductor by excimer laser doping. Applied Surface Science, 142. 227-232 doi:10.1016/s0169-4332(98)00657-6

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Reference TypeJournal (article/letter/editorial)
TitleSurface processing of CdTe compound semiconductor by excimer laser doping
JournalApplied Surface Science
AuthorsHatanaka, Y.Author
Niraula, M.Author
Aoki, Y.Author
Aoki, T.Author
Nakanishi, Y.Author
Year1999 (April)Volume142
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00657-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900973Long-form Identifiermindat:1:5:9900973:5
GUID0
Full ReferenceHatanaka, Y., Niraula, M., Aoki, Y., Aoki, T., Nakanishi, Y. (1999) Surface processing of CdTe compound semiconductor by excimer laser doping. Applied Surface Science, 142. 227-232 doi:10.1016/s0169-4332(98)00657-6
Plain TextHatanaka, Y., Niraula, M., Aoki, Y., Aoki, T., Nakanishi, Y. (1999) Surface processing of CdTe compound semiconductor by excimer laser doping. Applied Surface Science, 142. 227-232 doi:10.1016/s0169-4332(98)00657-6
In(n.d.) Applied Surface Science Vol. 142. Elsevier BV

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Hatanaka, Y, Niraula, M, Nakamura, A, Aoki, T (2001) Excimer laser doping techniques for II–VI semiconductors. Applied Surface Science, 175. 462-467 doi:10.1016/s0169-4332(01)00117-9
Gnatyuk, V.A., Aoki, T., Nakanishi, Y., Hatanaka, Y. (2003) Surface state of CdTe crystals irradiated by KrF excimer laser pulses near the melting threshold. Surface Science, 542 (1). 142-149 doi:10.1016/s0039-6028(03)00987-7
Niraula, M., Agata, Y., Yasuda, K., Nakamura, A., Aoki, T., Hatanaka, Y. (2004) Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors. physica status solidi (c), 1 (4). 1071-1074 doi:10.1002/pssc.200304279
Mochizuki, D., Niraula, M., Aoki, T., Nagai, T., Kinoshita, M., Hatanaka, Y. (2000) Pattern doping on CdTe by excimer laser irradiation. Journal of Crystal Growth, 214. 520-523 doi:10.1016/s0022-0248(00)00143-3
Ohara, K., Seino, T., Nakamura, A., Aoki, T., Kominami, H., Nakanishi, Y., Hatanaka, Y. (2005) Sb excimer-laser doping in ZnO films prepared by oxidation of sulfide on Si. Applied Surface Science, 244. 369-372 doi:10.1016/j.apsusc.2004.10.092
Ogita, M, Saika, N, Nakanishi, Y, Hatanaka, Y (1999) Ga2O3 thin films for high-temperature gas sensors. Applied Surface Science, 142. 188-191 doi:10.1016/s0169-4332(98)00714-4
Niraula, M., Aoki, T., Nakanishi, Y., Hatanaka, Y. (1999) Growth and doping studies of CdTe epilayers on GaAs substrates by low-pressure plasma-radical-assisted metalorganic chemical vapor deposition. Journal of Crystal Growth, 200 (1). 90-95 doi:10.1016/s0022-0248(98)00956-7
Hatanaka, Y., Aoki, T., Arakawa, T., Noda, D., Nakanishi, Y. (1998) Heavily doped p-type ZnSe layer formation by excimer laser doping. Journal of Crystal Growth, 184. 425-428 doi:10.1016/s0022-0248(98)80089-4
Shimaoka, G, Aoki, T, Nakanishi, Y, Hatanaka, Y, Udagawa, T (2001) Structure and optical properties of (0 0 1)GaAs surfaces nitrided in plasma-assisted NH3 gas. Applied Surface Science, 175. 436-441 doi:10.1016/s0169-4332(01)00097-6
Aoki, T., Morita, M., Wickramanayaka, S., Nakanishi, Y., Hatanaka, Y. (1996) Growth of ZnSe thin films by radical assisted MOCVD method. Applied Surface Science, 92. 132-137 doi:10.1016/0169-4332(95)00216-2
Mochizuki, D, Niraula, M, Aoki, T, Tomita, Y, Nihashi, T, Hatanaka, Y (1999) Excimer laser doping technique for application in an integrated CdTe imaging device. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 436 (1). 127-131 doi:10.1016/s0168-9002(99)00608-7
 
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