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Tabe, M, Kumezawa, M, Yamamoto, T, Makita, S, Yamaguchi, T, Ishikawa, Y (1999) Formation of high-density silicon dots on a silicon-on-insulator substrate. Applied Surface Science, 142. 553-557 doi:10.1016/s0169-4332(98)00703-x

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Reference TypeJournal (article/letter/editorial)
TitleFormation of high-density silicon dots on a silicon-on-insulator substrate
JournalApplied Surface Science
AuthorsTabe, MAuthor
Kumezawa, MAuthor
Yamamoto, TAuthor
Makita, SAuthor
Yamaguchi, TAuthor
Ishikawa, YAuthor
Year1999 (April)Volume142
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00703-xSearch in ResearchGate
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Mindat Ref. ID9901019Long-form Identifiermindat:1:5:9901019:3
GUID0
Full ReferenceTabe, M, Kumezawa, M, Yamamoto, T, Makita, S, Yamaguchi, T, Ishikawa, Y (1999) Formation of high-density silicon dots on a silicon-on-insulator substrate. Applied Surface Science, 142. 553-557 doi:10.1016/s0169-4332(98)00703-x
Plain TextTabe, M, Kumezawa, M, Yamamoto, T, Makita, S, Yamaguchi, T, Ishikawa, Y (1999) Formation of high-density silicon dots on a silicon-on-insulator substrate. Applied Surface Science, 142. 553-557 doi:10.1016/s0169-4332(98)00703-x
In(n.d.) Applied Surface Science Vol. 142. Elsevier BV

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Ishikawa, Yasuhiko, Kumezawa, Minoru, Nuryadi, Ratno, Tabe, Michiharu (2002) Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layer. Applied Surface Science, 190. 11-15 doi:10.1016/s0169-4332(01)00833-9
Tabe, Michiharu, Kumezawa, Minoru, Ishikawa, Yasuhiko, Mizuno, Takeshi (2001) Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin silicon-on-insulator wafers. Applied Surface Science, 175. 613-618 doi:10.1016/s0169-4332(01)00074-5
Nuryadi, R, Ishikawa, Y, Tabe, M (2000) Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure. Applied Surface Science, 159. 121-126 doi:10.1016/s0169-4332(00)00051-9
Tabe, Michiharu, Kumezawa, Minoru, Ishikawa, Yasuhiko (2001) Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate. Japanese Journal of Applied Physics, 40. doi:10.1143/jjap.40.l131
Tabe, M., Yamamoto, T., Terao, Y. (1997) Nitridation and subsequent oxidation process of Si(111) and (100) surfaces for high-density Si pillar formation. Applied Surface Science, 117. 131-135 doi:10.1016/s0169-4332(97)80066-9
Yamauchi, Y., Hirohata, Y., Hino, T., Nishikawa, M. (2001) Bubble formation on silicon by helium ion bombardment. Applied Surface Science, 169. 626-630 doi:10.1016/s0169-4332(00)00802-3
Rebhan, M, Rohwerder, M, Stratmann, M (1999) CVD of silicon and silicides on iron. Applied Surface Science, 140. 99-105 doi:10.1016/s0169-4332(98)00500-5
Majamaa, T, Kilpelä, O, Novikov, S, Sinkkonen, J (1999) Annealing of ultrathin silicon dioxide layers plasma oxidized in ultrahigh vacuum. Applied Surface Science, 142. 351-355 doi:10.1016/s0169-4332(98)00674-6
Casarin, M, Maccato, C, Vittadini, A (1999) Density functional studies of molecular chemisorption on TiO2 (110). Applied Surface Science, 142. 196-199 doi:10.1016/s0169-4332(98)00708-9
Hatanaka, Y., Niraula, M., Aoki, Y., Aoki, T., Nakanishi, Y. (1999) Surface processing of CdTe compound semiconductor by excimer laser doping. Applied Surface Science, 142. 227-232 doi:10.1016/s0169-4332(98)00657-6
Hoshi, T, Yoshida, S, Watanabe, T, Ichinohe, Y, Kudo, M (1999) Thickness and energy dependence of secondary ion emissions from Langmuir–Blodgett films. Applied Surface Science, 142. 614-618 doi:10.1016/s0169-4332(98)00698-9
 
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