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Oh, Y.T, Kang, T.W, Kim, T.W (1999) Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells. Applied Surface Science, 151. 29-32 doi:10.1016/s0169-4332(99)00252-4

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Reference TypeJournal (article/letter/editorial)
TitleDominant direct transitions in annealed GaAs/AlAs multiple quantum wells
JournalApplied Surface Science
AuthorsOh, Y.TAuthor
Kang, T.WAuthor
Kim, T.WAuthor
Year1999 (September)Volume151
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00252-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9901508Long-form Identifiermindat:1:5:9901508:2
GUID0
Full ReferenceOh, Y.T, Kang, T.W, Kim, T.W (1999) Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells. Applied Surface Science, 151. 29-32 doi:10.1016/s0169-4332(99)00252-4
Plain TextOh, Y.T, Kang, T.W, Kim, T.W (1999) Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells. Applied Surface Science, 151. 29-32 doi:10.1016/s0169-4332(99)00252-4
In(n.d.) Applied Surface Science Vol. 151. Elsevier BV

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Oh, Y.T., Kang, T.W., Kim, T.W. (1999) Effect of thermal annealing on the optical properties of Li+-implanted GaAs. Applied Surface Science, 147. 114-118 doi:10.1016/s0169-4332(99)00095-1
Oh, Y.T, Kang, T.W, Kim, T.W (1998) Comparison of the interdiffusion lengths in GaAs/Al0.35Ga0.65As multiple quantum wells determined from photoluminescence and double crystal X-ray rocking curve measurements. Applied Surface Science, 135. 238-242 doi:10.1016/s0169-4332(98)00271-2
Oh, Y.T., Kang, T.W., Kim, T.W. (1995) Interband transitions of Al0.35Ga0.65As/GaAs multiple quantum wells. Journal of Materials Science Letters, 14 (10) doi:10.1007/bf00253372
Wui, Y.H, Kang, T.W, Kim, T.W (1999) Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates. Applied Surface Science, 148. 211-214 doi:10.1016/s0169-4332(99)00131-2
Oh, Y.T., Kim, S.K., Byun, S.C., Kang, T.W., Hong, C.Y., Lee, J.J., Lee, H.K., Kim, T.W. (1995) The injected carbon impurities in intermixed GaAs/AlAs multiple quantum wells during thermal treatment. Journal of Crystal Growth, 150. 256-260 doi:10.1016/0022-0248(95)80217-z
Wui, Y.H., Kang, T.W., Kim, T.W. (1999) The dependence of the optical properties on the doping concentration in GaAs epilayers. Applied Surface Science, 147. 119-124 doi:10.1016/s0169-4332(99)00096-3
Shon, Y., Kang, T.W., Kim, T.W. (1998) Deep levels in neutron-transmutation-doped and thermally annealed semi-insulating GaAs. Applied Surface Science, 125. 321-324 doi:10.1016/s0169-4332(97)00404-2
Kang, T.W., Wui, Y.H., Jung, M., Kim, T.W., Moon, S.J., Kim, C.O. (1999) Structural, optical and electronic subband studies of lattice-matched In0.72Ga0.28As0.61P0.39/InP multiple quantum wells. Applied Surface Science, 141. 83-88 doi:10.1016/s0169-4332(98)00622-9
Wui, Y.H, Kang, T.W, Kim, T.W (1999) The dependence of the optical properties on the Ti doping concentration in GaAs epilayers. Applied Surface Science, 148. 111-115 doi:10.1016/s0169-4332(99)00120-8
Han, M.S, Kang, T.W, Kim, T.W (1999) Effect of thermal annealing on the structural and electrical properties of HgTe/CdTe superlattices. Applied Surface Science, 148. 105-110 doi:10.1016/s0169-4332(99)00121-x
Han, M.S., Kang, T.W., Kim, M.D., Jeoung, Y.T., Kim, H.K., Kim, J.M., Woo, H.J., Kim, T.W. (1997) The effect of hydrogenation in HgxCd1 −xTe thin films grown on p-CdTe (211) B substrates. Applied Surface Science, 120. 287-290 doi:10.1016/s0169-4332(97)00244-4
 
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