Vote for your favorite mineral in #MinCup25! - Cuprosklodowskite vs. Ikaite
It's radioactive #cuprosklodowskite vs ephemeral #ikaite for today's match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Wui, Y.H, Kang, T.W, Kim, T.W (1999) The dependence of the optical properties on the Ti doping concentration in GaAs epilayers. Applied Surface Science, 148. 111-115 doi:10.1016/s0169-4332(99)00120-8

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleThe dependence of the optical properties on the Ti doping concentration in GaAs epilayers
JournalApplied Surface Science
AuthorsWui, Y.HAuthor
Kang, T.WAuthor
Kim, T.WAuthor
Year1999 (June)Volume148
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00120-8Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9901368Long-form Identifiermindat:1:5:9901368:6
GUID0
Full ReferenceWui, Y.H, Kang, T.W, Kim, T.W (1999) The dependence of the optical properties on the Ti doping concentration in GaAs epilayers. Applied Surface Science, 148. 111-115 doi:10.1016/s0169-4332(99)00120-8
Plain TextWui, Y.H, Kang, T.W, Kim, T.W (1999) The dependence of the optical properties on the Ti doping concentration in GaAs epilayers. Applied Surface Science, 148. 111-115 doi:10.1016/s0169-4332(99)00120-8
In(n.d.) Applied Surface Science Vol. 148. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Wui, Y.H., Kang, T.W., Kim, T.W. (1999) The dependence of the optical properties on the doping concentration in GaAs epilayers. Applied Surface Science, 147. 119-124 doi:10.1016/s0169-4332(99)00096-3
Wui, Y.H, Kang, T.W, Kim, T.W (1999) Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates. Applied Surface Science, 148. 211-214 doi:10.1016/s0169-4332(99)00131-2
Han, M.S., Kang, T.W., Kim, T.W. (1999) The dependence of the structural and optical properties on the CdTe epitaxial layer thicknesses in CdTe (111)/GaAs (100) heterostructures. Applied Surface Science, 140. 1-11 doi:10.1016/s0169-4332(98)00363-8
Oh, Y.T., Kang, T.W., Kim, T.W. (1999) Effect of thermal annealing on the optical properties of Li+-implanted GaAs. Applied Surface Science, 147. 114-118 doi:10.1016/s0169-4332(99)00095-1
Kang, T.W., Wui, Y.H., Jung, M., Kim, T.W., Moon, S.J., Kim, C.O. (1999) Structural, optical and electronic subband studies of lattice-matched In0.72Ga0.28As0.61P0.39/InP multiple quantum wells. Applied Surface Science, 141. 83-88 doi:10.1016/s0169-4332(98)00622-9
Han, M.S, Kang, T.W, Kim, T.W (1999) Effect of thermal annealing on the structural and electrical properties of HgTe/CdTe superlattices. Applied Surface Science, 148. 105-110 doi:10.1016/s0169-4332(99)00121-x
Han, M.S, Kang, T.W, Kim, T.W (1999) The dependence of the structural properties on the period numbers and the CdTe thicknesses in HgTe/CdTe superlattices. Applied Surface Science, 153. 35-39 doi:10.1016/s0169-4332(99)00340-2
Oh, Y.T, Kang, T.W, Kim, T.W (1999) Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells. Applied Surface Science, 151. 29-32 doi:10.1016/s0169-4332(99)00252-4
Kang, T.W., Park, C.S., Kim, T.W. (2001) The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates. Applied Surface Science, 180. 81-86 doi:10.1016/s0169-4332(01)00320-8
Choy, S.E, Kang, T.W, Kim, D.Y, Kim, T.W (2000) Effects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates. Applied Surface Science, 161. 257-262 doi:10.1016/s0169-4332(00)00301-9
Hou, Y.B, Leem, J.H, Kang, T.W, Kim, T.W (1999) Effects of thermal annealing on the strains and structures of CdTe epilayers grown on Si(100) substrates for various substrate tilt angles. Applied Surface Science, 151. 213-217 doi:10.1016/s0169-4332(99)00273-1
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 14, 2025 12:48:19
Go to top of page