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Choy, S.E, Kang, T.W, Kim, D.Y, Kim, T.W (2000) Effects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates. Applied Surface Science, 161. 257-262 doi:10.1016/s0169-4332(00)00301-9

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Reference TypeJournal (article/letter/editorial)
TitleEffects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates
JournalApplied Surface Science
AuthorsChoy, S.EAuthor
Kang, T.WAuthor
Kim, D.YAuthor
Kim, T.WAuthor
Year2000 (July)Volume161
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00301-9Search in ResearchGate
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Mindat Ref. ID9902014Long-form Identifiermindat:1:5:9902014:5
GUID0
Full ReferenceChoy, S.E, Kang, T.W, Kim, D.Y, Kim, T.W (2000) Effects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates. Applied Surface Science, 161. 257-262 doi:10.1016/s0169-4332(00)00301-9
Plain TextChoy, S.E, Kang, T.W, Kim, D.Y, Kim, T.W (2000) Effects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates. Applied Surface Science, 161. 257-262 doi:10.1016/s0169-4332(00)00301-9
In(n.d.) Applied Surface Science Vol. 161. Elsevier BV

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Choy, S.E., Kang, T.W., Kim, T.W., Kim, Y.Y. (1997) Compensation for acceptor centers in AlxGa1−xAs layers by Er+-implantation and thermal treatment. Applied Surface Science, 119. 55-59 doi:10.1016/s0169-4332(97)00175-x
Oh, Y.T., Kang, T.W., Kim, T.W. (1999) Effect of thermal annealing on the optical properties of Li+-implanted GaAs. Applied Surface Science, 147. 114-118 doi:10.1016/s0169-4332(99)00095-1
Wui, Y.H, Kang, T.W, Kim, T.W (1999) Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates. Applied Surface Science, 148. 211-214 doi:10.1016/s0169-4332(99)00131-2
Chung, C.K., Kang, T.W., Hong, C.Y., Chang, K.S., Kim, T.W. (1997) Deep levels in Si-doped AlxGa1 − xAs layers. Applied Surface Science, 115. 174-179 doi:10.1016/s0169-4332(97)80201-2
Hou, Y.B, Leem, J.H, Kang, T.W, Kim, T.W (1999) Effects of thermal annealing on the strains and structures of CdTe epilayers grown on Si(100) substrates for various substrate tilt angles. Applied Surface Science, 151. 213-217 doi:10.1016/s0169-4332(99)00273-1
Ryu, Y.S., Kang, T.W., Kim, T.W. (2006) Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers. Applied Surface Science, 253. 2652-2656 doi:10.1016/j.apsusc.2006.05.028
Jeon, H.C., Kang, T.W., Kim, T.W. (2001) Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates. Applied Surface Science, 180. 209-213 doi:10.1016/s0169-4332(01)00350-6
Wui, Y.H., Kang, T.W., Kim, T.W. (1999) The dependence of the optical properties on the doping concentration in GaAs epilayers. Applied Surface Science, 147. 119-124 doi:10.1016/s0169-4332(99)00096-3
Wui, Y.H, Kang, T.W, Kim, T.W (1999) The dependence of the optical properties on the Ti doping concentration in GaAs epilayers. Applied Surface Science, 148. 111-115 doi:10.1016/s0169-4332(99)00120-8
Han, M.S, Kang, T.W, Kim, T.W (1999) Effect of thermal annealing on the structural and electrical properties of HgTe/CdTe superlattices. Applied Surface Science, 148. 105-110 doi:10.1016/s0169-4332(99)00121-x
Kim, M.D., Kang, T.W., Kim, T.W. (1999) Hydrogenation and annealing effects on the deep levels and acceptor neutralization in p-CdTe. Applied Surface Science, 137. 57-60 doi:10.1016/s0169-4332(98)00364-x
 
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