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Teramoto, Y, Watanabe, N, Fujimura, M, Nohira, H, Hattori, T (2000) Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100). Applied Surface Science, 159. 67-71 doi:10.1016/s0169-4332(00)00052-0

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Reference TypeJournal (article/letter/editorial)
TitlePeriodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100)
JournalApplied Surface Science
AuthorsTeramoto, YAuthor
Watanabe, NAuthor
Fujimura, MAuthor
Nohira, HAuthor
Hattori, TAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00052-0Search in ResearchGate
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Mindat Ref. ID9901892Long-form Identifiermindat:1:5:9901892:8
GUID0
Full ReferenceTeramoto, Y, Watanabe, N, Fujimura, M, Nohira, H, Hattori, T (2000) Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100). Applied Surface Science, 159. 67-71 doi:10.1016/s0169-4332(00)00052-0
Plain TextTeramoto, Y, Watanabe, N, Fujimura, M, Nohira, H, Hattori, T (2000) Periodic changes in interface state distribution in accordance with layer-by-layer oxidation on Si(100). Applied Surface Science, 159. 67-71 doi:10.1016/s0169-4332(00)00052-0
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Watanabe, N., Teramoto, Y., Omura, A., Nohira, H., Hattori, T. (2000) Detection of interface states correlated with SiO2/Si(111) interface structures. Applied Surface Science, 166. 460-464 doi:10.1016/s0169-4332(00)00472-4
Fujimura, Masaaki, Inoue, Kouta, Nohira, Hiroshi, Hattori, Takeo (2000) Atomic-scale surface morphology of ultrathin thermal oxide formed on Si(100) surface. Applied Surface Science, 162. 62-68 doi:10.1016/s0169-4332(00)00171-9
Ito, D, Yoshimura, T, Fujimura, N, Ito, T (2000) Improvement of Y2O3/Si interface for FeRAM application. Applied Surface Science, 159. 138-142 doi:10.1016/s0169-4332(00)00085-4
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Nohira, H, Hirose, K, Takahashi, K, Hattori, T (2000) Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides. Applied Surface Science, 162. 304-308 doi:10.1016/s0169-4332(00)00208-7
Hirose, K., Nohira, H., Sakano, K., Hattori, T. (2000) Atomic structure of SiO2 at SiO2/Si interfaces. Applied Surface Science, 166. 455-459 doi:10.1016/s0169-4332(00)00469-4
Hattori, Takeo, Fujimura, Masaaki, Yagi, Tomoyuki, Ohashi, Masatoshi (1998) Periodic changes in surface microroughness with progress of thermal oxidation of silicon. Applied Surface Science, 123. 87-90 doi:10.1016/s0169-4332(97)00432-7
Nohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., Hattori, T. (2003) Chemical and electronic structures of Lu2O3/Si interfacial transition layer. Applied Surface Science, 216. 234-238 doi:10.1016/s0169-4332(03)00425-2
Itakura, A.N, Narushima, T, Kitajima, M, Teraishi, K, Yamada, A, Miyamoto, A (2000) Surface stress in thin oxide layer made by plasma oxidation with applying positive bias. Applied Surface Science, 159. 62-66 doi:10.1016/s0169-4332(00)00055-6
Isshiki, H, Takahashi, M, Yamane, N, Iizuka, H, Aoyagi, Y, Sugano, T, Kimura, T (2000) Direct evaluation of atomic layer intermixing via disordering in ALE grown (GaAs)m(GaP)1 system. Applied Surface Science, 159. 508-513 doi:10.1016/s0169-4332(00)00101-x
 
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