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Kobayashi, Naoki, Kobayashi, Yasuyuki (2000) In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy. Applied Surface Science, 159. 398-404 doi:10.1016/s0169-4332(00)00116-1

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Reference TypeJournal (article/letter/editorial)
TitleIn-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy
JournalApplied Surface Science
AuthorsKobayashi, NaokiAuthor
Kobayashi, YasuyukiAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00116-1Search in ResearchGate
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Mindat Ref. ID9901954Long-form Identifiermindat:1:5:9901954:7
GUID0
Full ReferenceKobayashi, Naoki, Kobayashi, Yasuyuki (2000) In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy. Applied Surface Science, 159. 398-404 doi:10.1016/s0169-4332(00)00116-1
Plain TextKobayashi, Naoki, Kobayashi, Yasuyuki (2000) In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy. Applied Surface Science, 159. 398-404 doi:10.1016/s0169-4332(00)00116-1
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Kobayashi, Naoki, Kobayashi, Yasuyuki, Yamauchi, Yoshiharu, Horikoshi, Yoshiji (1992) In-situ optical monitoring of the decomposition process of gaseous sources in metal-organic chemical vapor deposition and atomic layer epitaxy. Applied Surface Science, 60. 544-552 doi:10.1016/0169-4332(92)90473-b
Kobayashi, Yasuyuki, Scholz, Ferdinand, Kobayashi, Naoki (1997) Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium. Japanese Journal of Applied Physics, 36. 2592-2595 doi:10.1143/jjap.36.2592
Kumagai, Yoshinao, Mayumi, Miho, Koukitu, Akinori, Seki, Hisashi (2000) In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN. Applied Surface Science, 159. 427-431 doi:10.1016/s0169-4332(00)00120-3
Kobayashi, Yasuyuki, Uwai, Kunihiko, Kobayashi, Naoki (1995) Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption. Japanese Journal of Applied Physics, 34. 3008-3011 doi:10.1143/jjap.34.3008
Nishida, Toshio, Uwai, Kunihiko, Kobayashi, Yasuyuki, Kobayashi, Naoki (1995) Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption. Japanese Journal of Applied Physics, 34. 6326-6330 doi:10.1143/jjap.34.6326
Kobayashi, Yasuyuki, Akasaka, Tetsuya, Kobayashi, Naoki (1998) Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1208
Kobayashi, Naoki (1994) In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption. Journal of Crystal Growth, 145 (1). 1-11 doi:10.1016/0022-0248(94)91021-9
Kobayashi, Yasuyuki, Kobayashi, Naoki (1998) Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption. Journal of Crystal Growth, 189. 301-304 doi:10.1016/s0022-0248(98)00268-1
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu (2000) Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy. Applied Surface Science, 159. 414-420 doi:10.1016/s0169-4332(00)00087-8
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto (2010) Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy. Applied Physics Letters, 97 (14). 141902pp. doi:10.1063/1.3497017
Kitagawa, Toshihisa, Kondo, Michio, Matsuda, Akihisa (2000) Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition. Applied Surface Science, 159. 30-34 doi:10.1016/s0169-4332(00)00081-7
 
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