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Akasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto (2010) Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy. Applied Physics Letters, 97 (14). 141902pp. doi:10.1063/1.3497017

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Reference TypeJournal (article/letter/editorial)
TitleSupersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsAkasaka, TetsuyaAuthor
Kobayashi, YasuyukiAuthor
Kasu, MakotoAuthor
Year2010 (October 4)Volume97
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3497017Search in ResearchGate
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Mindat Ref. ID8587072Long-form Identifiermindat:1:5:8587072:9
GUID0
Full ReferenceAkasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto (2010) Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy. Applied Physics Letters, 97 (14). 141902pp. doi:10.1063/1.3497017
Plain TextAkasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto (2010) Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy. Applied Physics Letters, 97 (14). 141902pp. doi:10.1063/1.3497017
In(2010, October) Applied Physics Letters Vol. 97 (14) AIP Publishing

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Akasaka, Tetsuya, Yamamoto, Hideki (2014) Nucleus and spiral growth mechanisms of nitride semiconductors in metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics, 53 (10) 100201 doi:10.7567/jjap.53.100201
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto (2008) Anisotropic in-plane strains in nonpolar AlN and AlGaN (112¯0) films grown on SiC (112¯0) substrates. Applied Physics Letters, 93 (16). 161908pp. doi:10.1063/1.2995994
Kobayashi, Yasuyuki, Akasaka, Tetsuya, Kobayashi, Naoki (1998) Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1208
Kasu, Makoto, Kobayashi, Naoki (1997) Surface kinetics of metalorganic vapor-phase epitaxy: surface diffusion, nucleus formation, sticking at steps. Journal of Crystal Growth, 174 (1). 513-521 doi:10.1016/s0022-0248(97)80017-6
Kasu, Makoto, Kobayashi, Naoki (1995) Surface diffusion of AlAs on GaAs in metalorganic vapor phase epitaxy studied by high‐vacuum scanning tunneling microscopy. Applied Physics Letters, 67 (19). 2842-2844 doi:10.1063/1.114803
Akasaka, Tetsuya, Ando, Seigo, Nishida, Toshio, Saito, Hisao, Kobayashi, Naoki (2001) Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates. Applied Physics Letters, 79 (9). 1261-1263 doi:10.1063/1.1394725
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) Growth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy. Applied Physics Letters, 90 (12). 121919pp. doi:10.1063/1.2716207
Kasu, Makoto, Kobayashi, Naoki (2000) Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 76 (20). 2910-2912 doi:10.1063/1.126514
Nishida, Toshio, Akasaka, Tetsuya, Kobayashi, Naoki (1998) Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l459
Kobayashi, Naoki, Kobayashi, Yasuyuki (2000) In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy. Applied Surface Science, 159. 398-404 doi:10.1016/s0169-4332(00)00116-1
Akasaka, Tetsuya, Nishida, Toshio, Ando, Seigo, Kobayashi, Naoki (1998) Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l842
 
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