Reference Type | Journal (article/letter/editorial) |
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Title | Radio frequency bias power effect on surface roughness of silicon carbide plasma etching |
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Journal | Applied Surface Science |
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Authors | Kim, Byungwhan | Author |
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Kim, Kunho | Author |
Lee, Byung Teak | Author |
Year | 2003 (July) | Volume | 217 |
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Publisher | Elsevier BV |
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DOI | doi:10.1016/s0169-4332(03)00567-1Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 9905400 | Long-form Identifier | mindat:1:5:9905400:9 |
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GUID | 0 |
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Full Reference | Kim, Byungwhan, Kim, Kunho, Lee, Byung Teak (2003) Radio frequency bias power effect on surface roughness of silicon carbide plasma etching. Applied Surface Science, 217. 261-267 doi:10.1016/s0169-4332(03)00567-1 |
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Plain Text | Kim, Byungwhan, Kim, Kunho, Lee, Byung Teak (2003) Radio frequency bias power effect on surface roughness of silicon carbide plasma etching. Applied Surface Science, 217. 261-267 doi:10.1016/s0169-4332(03)00567-1 |
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In | (n.d.) Applied Surface Science Vol. 217. Elsevier BV |
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