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Jayachandran, Suseendran, Billen, Arne, Douhard, Bastien, Conard, Thierry, Meersschaut, Johan, Moussa, Alain, Caymax, Matty, Bender, Hugo, Vandervorst, Wilfried, Heyns, Marc, Delabie, Annelies (2016) Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure. Applied Surface Science, 384. 152-160 doi:10.1016/j.apsusc.2016.04.137

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Reference TypeJournal (article/letter/editorial)
TitleGrowth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure
JournalApplied Surface Science
AuthorsJayachandran, SuseendranAuthor
Billen, ArneAuthor
Douhard, BastienAuthor
Conard, ThierryAuthor
Meersschaut, JohanAuthor
Moussa, AlainAuthor
Caymax, MattyAuthor
Bender, HugoAuthor
Vandervorst, WilfriedAuthor
Heyns, MarcAuthor
Delabie, AnneliesAuthor
Year2016 (October)Volume384
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2016.04.137Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9928616Long-form Identifiermindat:1:5:9928616:7
GUID0
Full ReferenceJayachandran, Suseendran, Billen, Arne, Douhard, Bastien, Conard, Thierry, Meersschaut, Johan, Moussa, Alain, Caymax, Matty, Bender, Hugo, Vandervorst, Wilfried, Heyns, Marc, Delabie, Annelies (2016) Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure. Applied Surface Science, 384. 152-160 doi:10.1016/j.apsusc.2016.04.137
Plain TextJayachandran, Suseendran, Billen, Arne, Douhard, Bastien, Conard, Thierry, Meersschaut, Johan, Moussa, Alain, Caymax, Matty, Bender, Hugo, Vandervorst, Wilfried, Heyns, Marc, Delabie, Annelies (2016) Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure. Applied Surface Science, 384. 152-160 doi:10.1016/j.apsusc.2016.04.137
In(n.d.) Applied Surface Science Vol. 384. Elsevier BV

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