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Zhang, Haodong, Arutchelvan, Goutham, Meersschaut, Johan, Gaur, Abhinav, Conard, Thierry, Bender, Hugo, Lin, Dennis, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Vandervorst, Wilfried, Delabie, Annelies (2017) MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics. Chemistry of Materials, 29. 6772-6780 doi:10.1021/acs.chemmater.7b01695

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Reference TypeJournal (article/letter/editorial)
TitleMoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics
JournalChemistry of Materials
AuthorsZhang, HaodongAuthor
Arutchelvan, GouthamAuthor
Meersschaut, JohanAuthor
Gaur, AbhinavAuthor
Conard, ThierryAuthor
Bender, HugoAuthor
Lin, DennisAuthor
Asselberghs, IngeAuthor
Heyns, MarcAuthor
Radu, IulianaAuthor
Vandervorst, WilfriedAuthor
Delabie, AnneliesAuthor
Year2017 (August 22)Volume29
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acs.chemmater.7b01695Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4310593Long-form Identifiermindat:1:5:4310593:5
GUID0
Full ReferenceZhang, Haodong, Arutchelvan, Goutham, Meersschaut, Johan, Gaur, Abhinav, Conard, Thierry, Bender, Hugo, Lin, Dennis, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Vandervorst, Wilfried, Delabie, Annelies (2017) MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics. Chemistry of Materials, 29. 6772-6780 doi:10.1021/acs.chemmater.7b01695
Plain TextZhang, Haodong, Arutchelvan, Goutham, Meersschaut, Johan, Gaur, Abhinav, Conard, Thierry, Bender, Hugo, Lin, Dennis, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Vandervorst, Wilfried, Delabie, Annelies (2017) MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics. Chemistry of Materials, 29. 6772-6780 doi:10.1021/acs.chemmater.7b01695
In(2017) Chemistry of Materials Vol. 29. American Chemical Society (ACS)


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