Blaschke, D., Munnik, F., Grenzer, J., Rebohle, L., Schmidt, H., Zahn, P., Gemming, S. (2020) A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C. Applied Surface Science, 506. 144188pp. doi:10.1016/j.apsusc.2019.144188
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C | ||
| Journal | Applied Surface Science | ||
| Authors | Blaschke, D. | Author | |
| Munnik, F. | Author | ||
| Grenzer, J. | Author | ||
| Rebohle, L. | Author | ||
| Schmidt, H. | Author | ||
| Zahn, P. | Author | ||
| Gemming, S. | Author | ||
| Year | 2020 (March) | Volume | 506 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.apsusc.2019.144188Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 9940368 | Long-form Identifier | mindat:1:5:9940368:5 |
| GUID | 0 | ||
| Full Reference | Blaschke, D., Munnik, F., Grenzer, J., Rebohle, L., Schmidt, H., Zahn, P., Gemming, S. (2020) A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C. Applied Surface Science, 506. 144188pp. doi:10.1016/j.apsusc.2019.144188 | ||
| Plain Text | Blaschke, D., Munnik, F., Grenzer, J., Rebohle, L., Schmidt, H., Zahn, P., Gemming, S. (2020) A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C. Applied Surface Science, 506. 144188pp. doi:10.1016/j.apsusc.2019.144188 | ||
| In | (n.d.) Applied Surface Science Vol. 506. Elsevier BV | ||
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