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GROENEN, P. A.C., HÖLSCHER, J. G.A., BRONGERSMA, H. H. (1991) ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991223

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Reference TypeJournal (article/letter/editorial)
TitleANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY
JournalLe Journal de Physique IV
AuthorsGROENEN, P. A.C.Author
HÖLSCHER, J. G.A.Author
BRONGERSMA, H. H.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991223Search in ResearchGate
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Mindat Ref. ID10295513Long-form Identifiermindat:1:5:10295513:4
GUID0
Full ReferenceGROENEN, P. A.C., HÖLSCHER, J. G.A., BRONGERSMA, H. H. (1991) ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991223
Plain TextGROENEN, P. A.C., HÖLSCHER, J. G.A., BRONGERSMA, H. H. (1991) ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991223
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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SCHOLTZ, J. H., GATICA, J. E., VILJOEN, H. J., HLAVACEK, V. (1991) ANALYSIS OF TRANSPORT PHENOMENA IN THE COATING OF FIBERS BY CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991216
RICHTER, W., KURPAS, P. (1991) IN - SITU OPTICAL CHARACTERISATION OF CVD PROCESSES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991218
WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
BRENNFLECK, K., REICH, H. (1991) CVD OF SiC IN LARGE COATING VESSELS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991257
HAMMADI, Z., LECOHIER, B., CROS, A., DALLAPORTA, H. (1993) Formation of CVD copper films investigated by surface analysis and reflectivity. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993311
Boer, H. J. (1999) Precision mass flow metering for CVD applications. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998109
SCHMADERER, F., HUBER, R., OETZMANN, H., WAHL, G. (1991) HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991264
McNEILL, D. W., LIANG, Y., MONTGOMERY, J. H., GAMBLE, H. S., ARMSTRONG, B. M. (1991) EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991291
Groenen, P.A.C., Hölscher, J.G.A., Brongersma, H.H. (1991) The WF6-Si reaction studied in situ by time-resolved mass spectrometry. Applied Surface Science, 53. 30-34 doi:10.1016/0169-4332(91)90238-f
Schlemm, H., Geiler, H. D., Kluge, A. (1994) In-situ investigation of ion implantation processes by thermal wave analysis. Le Journal de Physique IV, 4. doi:10.1051/jp4:1994740
CRAWFORD, W. W., ZUBER, J. R., KNOLLE, W. R. (1991) USE OF THE HAZOP ANALYSIS FOR EVALUATION OF CVD REACTORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991256
 
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