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WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254

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Reference TypeJournal (article/letter/editorial)
TitleSAFETY AND ENVIRONMENTAL ASPECTS OF CVD
JournalLe Journal de Physique IV
AuthorsWALLING, R. H.Author
MOSS, R. H.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991254Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10295544Long-form Identifiermindat:1:5:10295544:8
GUID0
Full ReferenceWALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
Plain TextWALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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HAMMOND, M. L. (1991) CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991255
SCHMADERER, F., HUBER, R., OETZMANN, H., WAHL, G. (1991) HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991264
BRENNFLECK, K., REICH, H. (1991) CVD OF SiC IN LARGE COATING VESSELS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991257
de BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R. (1991) NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991227
PORAT, R. (1991) CVD COATING OF CERAMIC LAYERS ON CERAMIC CUTTING TOOL MATERIALS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991265
WERNER, C . (1991) NUMERICAL MODELLING OF CVD PROCESSES AND EQUIPMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991201
MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
CRAWFORD, W. W., ZUBER, J. R., KNOLLE, W. R. (1991) USE OF THE HAZOP ANALYSIS FOR EVALUATION OF CVD REACTORS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991256
GROENEN, P. A.C., HÖLSCHER, J. G.A., BRONGERSMA, H. H. (1991) ANALYSIS OF CVD BY SURFACE ANALYSIS TECHNIQUES AND IN-SITU MASS SPECTROMETRY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991223
RUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297
COUDERC, J.-P. (1993) CVD process engineering : modelling aspects. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993301
 
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