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MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293

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Reference TypeJournal (article/letter/editorial)
TitleLOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT
JournalLe Journal de Physique IV
AuthorsMUROTA, J.Author
KATO, M.Author
KIRCHER, R.Author
ONO, S.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991293Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10295583Long-form Identifiermindat:1:5:10295583:7
GUID0
Full ReferenceMUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
Plain TextMUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

These are possibly similar items as determined by title/reference text matching only.

KIRCHER, R., FURUNO, M., MUROTA, J., ONO, S. (1991) LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991292
MUROTA, J., SAKURABA, M., MIKOSHIBA, N., ONO, S. (1991) CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991294
SAKURABA, M., MUROTA, J., ONO, S. (1993) Silicon atomic layer growth using flash heating in CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993362
MUROTA, J., MAEDA, T., GOTO, K., SAKAMOTO, K., AIZAWA, K., USHIODA, S., ONO, S. (1993) Si/Si1-x Gex/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993356
Murota, J., Sakuraba, M., Watanabe, T., Matsuura, T., Sawada, Y. (1995) Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:19955130
HAMMOND, M. L. (1991) CVD EXHAUST - SAFETY AND ENVIRONMENTAL SANITY. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991255
McNEILL, D. W., LIANG, Y., MONTGOMERY, J. H., GAMBLE, H. S., ARMSTRONG, B. M. (1991) EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991291
WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
OKOLI, S., HAUBNER, R., LUX, B. (1991) INFLUENCE OF THE FILAMENT MATERIAL ON LOW-PRESSURE HOT-FILAMENT CVD DIAMOND DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912111
KANOH, H., SUGIURA, O., FUJIOKA, S., ARAMAKI, Y., HATTORI, T., MATSUMURA, M. (1991) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991298
 
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