| Reference Type | Journal (article/letter/editorial) |
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| Title | LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE |
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| Journal | Le Journal de Physique IV |
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| Authors | KANOH, H. | Author |
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| SUGIURA, O. | Author |
| FUJIOKA, S. | Author |
| ARAMAKI, Y. | Author |
| HATTORI, T. | Author |
| MATSUMURA, M. | Author |
| Year | 1991 (September) | Volume | 2 |
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| Publisher | EDP Sciences |
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| DOI | doi:10.1051/jp4:1991298Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 10295588 | Long-form Identifier | mindat:1:5:10295588:2 |
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|
| GUID | 0 |
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| Full Reference | KANOH, H., SUGIURA, O., FUJIOKA, S., ARAMAKI, Y., HATTORI, T., MATSUMURA, M. (1991) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991298 |
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| Plain Text | KANOH, H., SUGIURA, O., FUJIOKA, S., ARAMAKI, Y., HATTORI, T., MATSUMURA, M. (1991) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991298 |
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| In | (n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences |
|---|
These are possibly similar items as determined by title/reference text matching only.
