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DALLAPORTA, H., HAMMADI, Z., PIERRISNARD, R., CROS, A. (1991) CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912106

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Reference TypeJournal (article/letter/editorial)
TitleCHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON
JournalLe Journal de Physique IV
AuthorsDALLAPORTA, H.Author
HAMMADI, Z.Author
PIERRISNARD, R.Author
CROS, A.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:19912106Search in ResearchGate
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Mindat Ref. ID10295488Long-form Identifiermindat:1:5:10295488:5
GUID0
Full ReferenceDALLAPORTA, H., HAMMADI, Z., PIERRISNARD, R., CROS, A. (1991) CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912106
Plain TextDALLAPORTA, H., HAMMADI, Z., PIERRISNARD, R., CROS, A. (1991) CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912106
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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HAMMADI, Z., LECOHIER, B., CROS, A., DALLAPORTA, H. (1993) Formation of CVD copper films investigated by surface analysis and reflectivity. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993311
Marchi, F., Tonneau, D., Pierrisnard, R., Bouchiat, V., Safarov, V., Dallaporta, H., Doppelt, P., Even, R. (1999) Deposition of nanoscale rhodium dots by STM assisted CVD. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999892
Tonneau, D., Pierrisnard, R., Dallaporta, H., Marine, W. (1995) Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate. Le Journal de Physique IV, 5. doi:10.1051/jphyscol:1995575
KANOH, H., SUGIURA, O., FUJIOKA, S., ARAMAKI, Y., HATTORI, T., MATSUMURA, M. (1991) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991298
WANG, Y., CHAUSSAVOINE, C., TEYSSANDIER, F. (1991) 2D MODELLING OF SILICON CHEMICAL VAPOR DEPOSITION IN AN IMPINGING JET REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991204
TREICHEL, H., BRAUN, R., GABRIC, Z., SPINDLER, O., GSCHWANDTNER, A. (1991) PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991299
GRABIEC, P. B., LYSKO, J. M. (1991) MICROENGINEERING - THE NEW APPLICATION OF CHEMICAL VAPOR DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912107
ALEXANDROV, S. E., KOVALGIN, A. Y. (1991) REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912100
Gleizes, A. N., Vidal, S., Davazoglou, D. (2001) Fabrication of fine copper lines on AZ 5214TM patterned silicon substrates by selective chemical vapor deposition. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013151
FAKIH, C., BES, R. S., ARMAS, B., THENEGAL, D. (1991) PLASMA DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991250
ANTONOV, E. N., BAGRATASHVILI, V. N., FATEEV, O. V., SEMCHISHEN, V. A. (1991) EXCIMER-LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF COPPER FILMS FROM COPPER TRIFLUOROACETYLACETONATE. Le Journal de Physique IV, 1. doi:10.1051/jp4:19917179
 
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