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TREICHEL, H., BRAUN, R., GABRIC, Z., SPINDLER, O., GSCHWANDTNER, A. (1991) PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991299

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Reference TypeJournal (article/letter/editorial)
TitlePLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES
JournalLe Journal de Physique IV
AuthorsTREICHEL, H.Author
BRAUN, R.Author
GABRIC, Z.Author
SPINDLER, O.Author
GSCHWANDTNER, A.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991299Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10295589Long-form Identifiermindat:1:5:10295589:9
GUID0
Full ReferenceTREICHEL, H., BRAUN, R., GABRIC, Z., SPINDLER, O., GSCHWANDTNER, A. (1991) PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991299
Plain TextTREICHEL, H., BRAUN, R., GABRIC, Z., SPINDLER, O., GSCHWANDTNER, A. (1991) PLANARIZED LOW-STRESS OXIDE/NITRIDE PASSIVATION FOR ULSI DEVICES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991299
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

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DALLAPORTA, H., HAMMADI, Z., PIERRISNARD, R., CROS, A. (1991) CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912106
KERN, W., CHEN, A., SANDLER, N. (1991) MOCVD OF TANTALUM PENTOXIDE FOR LARGE-AREA ULSI CIRCUIT WAFERS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991238
TISSIER, A., KHALLAAYOUNE, J., GERODOLLE, A., HUIZING, B. (1991) PLANARIZED INTERMETAL DIELECTRIC DEPOSITED BY DECR CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991253
KANOH, H., SUGIURA, O., FUJIOKA, S., ARAMAKI, Y., HATTORI, T., MATSUMURA, M. (1991) LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991298
GRIFFITHS, R. J.M. (1991) MOCVD - THE ROUTE TO HIGH PERFORMANCE COMPOUND SEMICONDUCTOR OPTOELECTRONIC DEVICES. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912108
FAKIH, C., BES, R. S., ARMAS, B., THENEGAL, D. (1991) PLASMA DEPOSITION OF SILICON NITRIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991250
BREITENSTEIN, O., RAITH, H. (1991) A NOVEL COMMERCIAL SCANNING-DLTS EQUIPMENT. Le Journal de Physique IV, 1. doi:10.1051/jp4:1991651
WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
ALEXANDROV, S. E., KOVALGIN, A. Y. (1991) REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912100
GUORUI, D. (1991) A STUDY OF GAS SENSING PROPERTIES OF OXIDE MULTILAYER THIN FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912118
LU, M., DUAN, Z. P. (1991) AN ASYMPTOTIC ANALYSIS FOR ONE DIMENSIONAL STRESS WAVE PROPAGATION IN DAMAGED VISCOELASTIC MEDIA. Le Journal de Physique IV, 1. doi:10.1051/jp4:19913120
 
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