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RUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297

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Reference TypeJournal (article/letter/editorial)
TitleGROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD
JournalLe Journal de Physique IV
AuthorsRUDDELL, F. H.Author
ARMSTRONG, B. M.Author
GAMBLE, H. S.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991297Search in ResearchGate
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Mindat Ref. ID10295587Long-form Identifiermindat:1:5:10295587:5
GUID0
Full ReferenceRUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297
Plain TextRUDDELL, F. H., ARMSTRONG, B. M., GAMBLE, H. S. (1991) GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991297
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

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McNEILL, D. W., LIANG, Y., MONTGOMERY, J. H., GAMBLE, H. S., ARMSTRONG, B. M. (1991) EPITAXIAL SILICON GROWTH BY RAPID THERMAL CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991291
YE, L., ARMSTRONG, B. M., GAMBLE, H. S. (1993) Low pressure silicon selective epitaxial growth and its thermodynamic considerations. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993306
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
Bain, M. F., Armstrong, B. M., Gamble, H. S. (1999) Deposition of tungsten by plasma enhanced chemical vapour deposition. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998105
de BREE, H. B., HAAFKENS, M. H., MICHORIUS, M. M., WOLFF, L. R. (1991) NUCLEATION AND GROWTH IN TiN CVD ON GRAPHITE SUBSTRATES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991227
SAKURABA, M., MUROTA, J., ONO, S. (1993) Silicon atomic layer growth using flash heating in CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993362
WALLING, R. H., MOSS, R. H. (1991) SAFETY AND ENVIRONMENTAL ASPECTS OF CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991254
Raffy, C., Blanquet, E., Pons, M., Bernard, C., Melius, C. F., Allendorf, M. D. (1999) Contribution to the modeling of CVD silicon carbide growth. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999825
SCHMADERER, F., HUBER, R., OETZMANN, H., WAHL, G. (1991) HIGH-TC-SUPERCONDUCTORS PREPARED BY CVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991264
BRENNFLECK, K., REICH, H. (1991) CVD OF SiC IN LARGE COATING VESSELS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991257
MATSUKATA, M., ODAGIRI, T., KOJIMA, T. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON PARTICLES PRODUCED VIA CVD FROM MONOSILANE IN A FLUIDIZED BED REACTOR. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991259
 
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