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(2011) Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices. Materials Research Bulletin, 46 (10) 1582-1585 doi:10.1016/j.materresbull.2011.06.023

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Reference TypeJournal (article/letter/editorial)
TitleHighly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
JournalMaterials Research Bulletin
Year2011 (October)Volume46
Issue10
PublisherElsevier BV
DOIdoi:10.1016/j.materresbull.2011.06.023Search in ResearchGate
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Mindat Ref. ID13486538Long-form Identifiermindat:1:5:13486538:8
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Full Reference(2011) Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices. Materials Research Bulletin, 46 (10) 1582-1585 doi:10.1016/j.materresbull.2011.06.023
Plain Text(2011) Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices. Materials Research Bulletin, 46 (10) 1582-1585 doi:10.1016/j.materresbull.2011.06.023
In(2011, October) Materials Research Bulletin Vol. 46 (10) Elsevier BV

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(2012) High optical quality ZnO films grown on graphite substrate for transferable optoelectronics devices by ultrasonic spray pyrolysis. Materials Research Bulletin, 47 (9) 2685-2688 doi:10.1016/j.materresbull.2012.05.010
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