(2011) Study of GaP single crystal layers grown on GaN by MOCVD. Materials Research Bulletin, 46 (11) 1942-1945 doi:10.1016/j.materresbull.2011.07.017
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Study of GaP single crystal layers grown on GaN by MOCVD | ||
Journal | Materials Research Bulletin | ||
Year | 2011 (November) | Volume | 46 |
Issue | 11 | ||
Publisher | Elsevier BV | ||
DOI | doi:10.1016/j.materresbull.2011.07.017Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 13486586 | Long-form Identifier | mindat:1:5:13486586:9 |
GUID | 0 | ||
Full Reference | (2011) Study of GaP single crystal layers grown on GaN by MOCVD. Materials Research Bulletin, 46 (11) 1942-1945 doi:10.1016/j.materresbull.2011.07.017 | ||
Plain Text | (2011) Study of GaP single crystal layers grown on GaN by MOCVD. Materials Research Bulletin, 46 (11) 1942-1945 doi:10.1016/j.materresbull.2011.07.017 | ||
In | (2011, November) Materials Research Bulletin Vol. 46 (11) Elsevier BV |
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