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Fillard, J. P., Manifacier, J. C. (1970) SnO2-Semi-Conductor Heterojunction. Electrical Properties of a Particular MOS Structure. Japanese Journal of Applied Physics, 9 (8) 1012-1013 doi:10.1143/jjap.9.1012

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Reference TypeJournal (article/letter/editorial)
TitleSnO2-Semi-Conductor Heterojunction. Electrical Properties of a Particular MOS Structure
JournalJapanese Journal of Applied Physics
AuthorsFillard, J. P.Author
Manifacier, J. C.Author
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1012Search in ResearchGate
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Mindat Ref. ID14978066Long-form Identifiermindat:1:5:14978066:9
GUID0
Full ReferenceFillard, J. P., Manifacier, J. C. (1970) SnO2-Semi-Conductor Heterojunction. Electrical Properties of a Particular MOS Structure. Japanese Journal of Applied Physics, 9 (8) 1012-1013 doi:10.1143/jjap.9.1012
Plain TextFillard, J. P., Manifacier, J. C. (1970) SnO2-Semi-Conductor Heterojunction. Electrical Properties of a Particular MOS Structure. Japanese Journal of Applied Physics, 9 (8) 1012-1013 doi:10.1143/jjap.9.1012
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

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Manifacier, J. C., Fillard, J. P. (1976) Observation of Switching and Oscillation Phenomena in Forward Biased Ge-Ag Diodes. Japanese Journal of Applied Physics, 15 (3) 457-461 doi:10.1143/jjap.15.457
Castagne, M., Bonnafe, J., Manifacier, J. C., Fillard, J. P. (1980) Evidence for a shallow level structure in the bulk of semi‐insulating GaAs. Journal of Applied Physics, 51 (9). 4894-4897 doi:10.1063/1.328327
Fillard, J. P., Gall, P., Baroudi, A., George, A., Bonnafe, J. (1987) Defect Structures in InP Crystals by Laser Scanning Tomography. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1255
Fillard, J. P., Montgomery, P., Baroudi, A., Bonnafé, J., Gall, P. (1988) Image Analysis of EL2 Distributions in LEC GaAs Si Materials. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l258
De Murcia, M., Bonnafe, J., Manifacier, J. C., Fillard, J. P. (1978) Photoelectronic processes in high‐resistivity stannic oxide. Journal of Applied Physics, 49 (3). 1177-1187 doi:10.1063/1.324709
Nishino, Taneo, Hamakawa, Yoshihiro (1970) Electrical and Optical Properties of Si-SnO2Heterojunctions. Japanese Journal of Applied Physics, 9 (9) 1085-1090 doi:10.1143/jjap.9.1085
Toda, Minoru (1970) Nonlinear Effects of Surface Charge Waves in a n-InSb MOS Structure in a Transverse Magnetic Field. Japanese Journal of Applied Physics, 9 (1) 49-57 doi:10.1143/jjap.9.49
Yokozeki, Shunsuke, Suzuki, Tatsuro (1970) Theoretical Interpretation of Moiré Pattern for Two Grids of Parallel Lines. Japanese Journal of Applied Physics, 9 (8) 1011-1012 doi:10.1143/jjap.9.1011
Yonezu, Hiroo (1970) Analysis on the Wave Confinement in the GaxAl1-xAs-GaAs Laser Diode. Japanese Journal of Applied Physics, 9 (8) 1013-1014 doi:10.1143/jjap.9.1013
Okimura, Hiroshi, Kondo, Ryuji (1970) Electrical and Photovoltaic Properties of CdS-Si Junctions. Japanese Journal of Applied Physics, 9 (3) 274-280 doi:10.1143/jjap.9.274
Manifacier, J C, Gasiot, J, Parot, P, Fillard, J P (1978) A comment on thermally stimulated polarisation currents. Journal of Physics C: Solid State Physics, 11 (5). 1011-1015 doi:10.1088/0022-3719/11/5/020
 
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