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Fillard, J. P., Gall, P., Baroudi, A., George, A., Bonnafe, J. (1987) Defect Structures in InP Crystals by Laser Scanning Tomography. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1255

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Reference TypeJournal (article/letter/editorial)
TitleDefect Structures in InP Crystals by Laser Scanning Tomography
JournalJapanese Journal of Applied Physics
AuthorsFillard, J. P.Author
Gall, P.Author
Baroudi, A.Author
George, A.Author
Bonnafe, J.Author
Year1987 (August 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1255Search in ResearchGate
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Mindat Ref. ID14989871Long-form Identifiermindat:1:5:14989871:5
GUID0
Full ReferenceFillard, J. P., Gall, P., Baroudi, A., George, A., Bonnafe, J. (1987) Defect Structures in InP Crystals by Laser Scanning Tomography. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1255
Plain TextFillard, J. P., Gall, P., Baroudi, A., George, A., Bonnafe, J. (1987) Defect Structures in InP Crystals by Laser Scanning Tomography. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1255
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

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Fillard, J. P., Montgomery, P., Baroudi, A., BonnafƩ, J., Gall, P. (1988) Image Analysis of EL2 Distributions in LEC GaAs Si Materials. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l258
Fillard, Jp, Montgomery, P., Gall, P., Asgarinia, M., Bonnafe, J. (1988) The Role of EL2 Centres in Infra Red Images of Defects in GaAs Materials. Japanese Journal of Applied Physics, 27. 384-388 doi:10.1143/jjap.27.384
Fillard, Jp., Gall, P., Asgarinia, M., Castagne, M., Baroudi, M. (1988) EL2Ā° Distribution in the Vicinity of Dislocations in GaAs-In Materials. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l899
Gall, P., Fillard, J. P., Castagne, M., Weyher, J. L., Bonnafe, J. (1988) Microtomography observation of precipitates in semiā€insulating GaAs materials. Journal of Applied Physics, 64 (10). 5161-5169 doi:10.1063/1.342426
Inoue, Takayuki, Takahashi, Junzo (1987) Photoluminescence Study of Undoped, Sn-Doped and S-Doped InP Single Crystals. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l249
Komiyama, Susumu, Kuroda, Shinji (1987) Far-Infrared Laser Oscillation in p-Ge Using External Reflectors. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l71
Morita, Seizo, Tsukada, Shuichi, Mikoshiba, Nobuo (1987) Atomic Images of Disordered Regions in Graphite Crystals Obtained with Scanning Tunneling Microscope. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1511
Sameshima, Toshiyuki, Usui, Setsuo (1987) Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1208
Watanabe, Isao, Koyama, Fumio, Iga, Kenichi (1987) GaInAsP/InP CBH Surface-Emitting Laser with a Dielectric Multilayer Reflector. Japanese Journal of Applied Physics, 26. 1598-1599 doi:10.1143/jjap.26.1598
Kondo, Susumu, Amano, Toshimasa, Nagai, Haruo (1987) High-Purity LPE Growth of InP by Co Addition to an Inā€“P Melt. Japanese Journal of Applied Physics, 26. 1997-2001 doi:10.1143/jjap.26.1997
Miyamoto, Yasuyuki, Cao, Ming, Furuya, Kazuhito, Suematsu, Yasuharu (1987) GaInAsP/InP Single Quantum-Well Lasers by OMVPE. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l176
 
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