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Kato, Takamasa, Matsumoto, Takashi, Kobatake, Takaaki, Ishida, Tetsuro (1987) Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1161

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Reference TypeJournal (article/letter/editorial)
TitleStrain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
JournalJapanese Journal of Applied Physics
AuthorsKato, TakamasaAuthor
Matsumoto, TakashiAuthor
Kobatake, TakaakiAuthor
Ishida, TetsuroAuthor
Year1987 (July 20)Volume26
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.26.l1161Search in ResearchGate
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Mindat Ref. ID14989836Long-form Identifiermindat:1:5:14989836:4
GUID0
Full ReferenceKato, Takamasa, Matsumoto, Takashi, Kobatake, Takaaki, Ishida, Tetsuro (1987) Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1161
Plain TextKato, Takamasa, Matsumoto, Takashi, Kobatake, Takaaki, Ishida, Tetsuro (1987) Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1161
In(1987) Japanese Journal of Applied Physics Vol. 26. Japan Society of Applied Physics

See Also

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Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1987) Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1085
Kato, Takamasa, Matsumoto, Takashi, Hosoki, Mitsuru, Ishida, Tetsuro (1987) Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1597
Matsumoto, Takashi, Kato, Takamasa, Hosoki, Mitsuru, Ishida, Tetsuro (1987) Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l576
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1987) Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch. Japanese Journal of Applied Physics, 26. 893-896 doi:10.1143/jjap.26.893
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1989) Local Fluctuation of Alloy Composition in InGaAsP/GaAs LPE Layers. Japanese Journal of Applied Physics, 28. 1513-1514 doi:10.1143/jjap.28.1513
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1982) LPE Growth of In1-xGaxAs1-yPywith Narrow Photoluminescence Spectrum on GaAs (111)B Substrates. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l667
Kato, Takamasa, Matsumoto, Takashi, Yoshioka, Yasuhiro, Kobayashi, Masaya, Ishida, Tetsuro (1984) Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l723
Kato, Takamasa, Matsumoto, Takashi, Ishida, Tetsuro (1976) Luminescence of Zn Diffused In1-xGaxP in the Direct Transition Region. Japanese Journal of Applied Physics, 15 (11) 2265-2266 doi:10.1143/jjap.15.2265
Matsumoto, Takashi, Nakanishi, Hiroshi, Ishida, Tetsuro (1987) Chemical Vapor Deposition of CuGaS2Using Chloride Sources. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l1263
Kato, Takamasa, Matsumoto, Takashi, Ogura, Hiroyuki, Ishida, Tetsuro (1989) Temperature Variation of Lattice Strain in Slightly Mismatched InGaP/GaAs LPE Layers ($0{<}(\varDelta a/a)_{\bot}{\lesssim} 0.6\%$) Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l159
Shirakata, Sho, Nishino, Taneo, Hamakawa, Yoshihiro, Kato, Takamasa, Ishida, Tetsuro (1987) 3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l127
 
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