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Pavelescu, C., Cobianu, C. (1986) Analysis of the linear regime of thermal oxidation of silicon in dry oxygen at atmospheric pressure and correlation with film properties. Journal of Materials Science Letters, 5 (12) 1298-1300 doi:10.1007/bf01729399

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of the linear regime of thermal oxidation of silicon in dry oxygen at atmospheric pressure and correlation with film properties
JournalJournal of Materials Science Letters
AuthorsPavelescu, C.Author
Cobianu, C.Author
Year1986 (December)Volume5
Issue12
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf01729399Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16409639Long-form Identifiermindat:1:5:16409639:4
GUID0
Full ReferencePavelescu, C., Cobianu, C. (1986) Analysis of the linear regime of thermal oxidation of silicon in dry oxygen at atmospheric pressure and correlation with film properties. Journal of Materials Science Letters, 5 (12) 1298-1300 doi:10.1007/bf01729399
Plain TextPavelescu, C., Cobianu, C. (1986) Analysis of the linear regime of thermal oxidation of silicon in dry oxygen at atmospheric pressure and correlation with film properties. Journal of Materials Science Letters, 5 (12) 1298-1300 doi:10.1007/bf01729399
In(1986, December) Journal of Materials Science Letters Vol. 5 (12) Springer Science and Business Media LLC

See Also

These are possibly similar items as determined by title/reference text matching only.

Pavelescu, C., Cobianu, C., Bercu, M. (1985) A fitting analysis of dry O2 atmospheric pressure silicon oxidation data and correlations with film properties. Journal of Materials Science Letters, 4 (7) 822-825 doi:10.1007/bf00720513
Pavelescu, C., Badila, M., Cobianu, C. (1988) An analysis of the initial oxidation regions of silicon in dry oxygen at atmospheric pressure. Journal of Materials Science Letters, 7 (10) 1110-1111 doi:10.1007/bf00720847
Pavelescu, C., Cobianu, C. (1988) A mechanism for the surface reaction between silane and oxygen at low temperature and correlations with the properties of the deposited SiO2 films. Journal of Materials Science Letters, 7 (10) 1107-1109 doi:10.1007/bf00720846
Cobianu, C., Pavelescu, C., Catuneanu, V. M. (1987) Dielectric constant and dissipation factor in LTCVD SiO2 films. Journal of Materials Science Letters, 6 (1) 23-24 doi:10.1007/bf01729416
Pavelescu, C., Cobianu, C., Segal, E. (1984) Etching kinetics of the low temperature chemically vapour deposited SiO2 films. Journal of Materials Science Letters, 3 (7) 643-646 doi:10.1007/bf00719636
Cobianu, C., Pavelescu, C., Paunescu, A. (1985) The effect of deposition conditions on the refractive index of LTCVD SiO2 films. Journal of Materials Science Letters, 4 (11) 1419-1420 doi:10.1007/bf00720117
Pavelescu, C., Cobianu, C. (1990) Correlations between the properties and the deposition kinetics of low-temperature chemical vapour deposited SiO2 films: the effect of O2/SiH4 mole ratio. Journal of Materials Science Letters, 9 (2) 143-144 doi:10.1007/bf00727697
Cobianu, C., Pavelescu, C. (1984) An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditions. Journal of Materials Science Letters, 3 (11) 979-982 doi:10.1007/bf00720334
Pavelescu, C., Cobianu, C., Segal, E. (1985) Etch rate of low-temperature chemically vapour deposited SiO2 films in P-etch solution: the effect of deposition conditions. Journal of Materials Science Letters, 4 (10) 1280-1281 doi:10.1007/bf00723481
Massoud, Hisham Z. (1985) Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime. Journal of the Electrochemical Society, 132. 2685pp. doi:10.1149/1.2113648
Massoud, Hisham Z. (1985) Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime. Journal of the Electrochemical Society, 132. 2693pp. doi:10.1149/1.2113649
 
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