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Kwok, H. L., Lam, Y. W., Chu, W. C., Wong, S. P., Poon, M. C. (1986) P-n junctions and Schottky barriers formed by antimony recoil implantation. Journal of Materials Science Letters, 5 (8) 789-791 doi:10.1007/bf01730093

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Reference TypeJournal (article/letter/editorial)
TitleP-n junctions and Schottky barriers formed by antimony recoil implantation
JournalJournal of Materials Science Letters
AuthorsKwok, H. L.Author
Lam, Y. W.Author
Chu, W. C.Author
Wong, S. P.Author
Poon, M. C.Author
Year1986 (August)Volume5
Issue8
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf01730093Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID16409908Long-form Identifiermindat:1:5:16409908:1
GUID0
Full ReferenceKwok, H. L., Lam, Y. W., Chu, W. C., Wong, S. P., Poon, M. C. (1986) P-n junctions and Schottky barriers formed by antimony recoil implantation. Journal of Materials Science Letters, 5 (8) 789-791 doi:10.1007/bf01730093
Plain TextKwok, H. L., Lam, Y. W., Chu, W. C., Wong, S. P., Poon, M. C. (1986) P-n junctions and Schottky barriers formed by antimony recoil implantation. Journal of Materials Science Letters, 5 (8) 789-791 doi:10.1007/bf01730093
In(1986, August) Journal of Materials Science Letters Vol. 5 (8) Springer Science and Business Media LLC

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Kwok, H. L., Lam, Y. W., Wong, S. P., Poon, M. C. (1986) Mixing of phosphorus and antimony ions in silicon by recoil implantation. Journal of Materials Science Letters, 5 (6) 633-634 doi:10.1007/bf01731532
Wong, W. C., Lam, Y. W., Kwok, H. L. (1987) Recoil implantation of aluminium into n-silicon. Journal of Materials Science Letters, 6 (5) 531-534 doi:10.1007/bf01739275
Kwok, H. L., Lam, Y. W. (1989) A study of CoSi x silicide formed by recoil implantation. Journal of Materials Science Letters, 8 (3) 364-366 doi:10.1007/bf00725525
Kwok, H. L., Wong, W. C. (1991) Damage effects in as-prepared recoil-implanted shallow p-n junctions. Journal of Materials Science, 26. 5703-5707 doi:10.1007/bf01130105
Kwok, H. L., Wong, S. C. (1989) Shallow Sb-doped Si surface layers formed by recoil implantation. Journal of Materials Science, 24. 1073-1076 doi:10.1007/bf01148801
Li, L. H., Poon, R. W. Y., Kwok, S. C. H., Chu, P. K., Wu, Y. Q., Zhang, Y. H. (2003) Hybrid evaporation: Glow discharge source for plasma immersion ion implantation. Review of Scientific Instruments, 74 (10). 4301-4304 doi:10.1063/1.1606535
Chui, C.-H., Wang, Q., Chow, W.-C., Yuen, M. C.-W., Wong, K.-L., Kwok, W.-M., Cheng, G. Y.-M., Wong, R. S.-M., Tong, S.-W., Chan, K.-W., Lau, F.-Y., Lai, P. B.-S., Lam, K.-H., Fabbri, E., Tao, X.-M., Gambari, R., Wong, W.-Y. (2010) 5-(Dimethylamino)-N-(4-ethynylphenyl)-1-naphthalenesulfonamide as a novel bifunctional antitumor agent and two-photon induced bio-imaging probe. Chemical Communications, 46 (20). 3538pp. doi:10.1039/b926908h
Blyth, S. C., Chan, Y. L., Chen, X. C., Chu, M. C., Cui, K. X., Hahn, R. L., Ho, T. H., Hor, Y. K., Hsiung, Y. B., Hu, B. Z., Kwan, K. K., Kwok, M. W., Kwok, T., Lau, Y. P., Lee, K. P., Leung, J. K. C., Leung, K. Y., Lin, G. L., Lin, Y. C., Luk, K. B., Luk, W. H., Ngai, H. Y., Ngai, W. K., Ngan, S. Y., Pun, C. S. J., Shih, K., Tam, Y. H., Tsang, R. H. M., Wang, C. H., Wong, C. M., Wong, H. H. C., Wong, H. L. H., Wong, K. K., Yeh, M., , (2016) Publisher’s Note: Measurement of cosmic-ray muons and muon-induced neutrons in the Aberdeen Tunnel Underground Laboratory [Phys. Rev. D 93 , 072005 (2016)]. Physical Review D, 94 (9). doi:10.1103/physrevd.94.099906
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Ruotolo, A., Lam, C. Y., Cheng, W. F., Wong, K. H., Leung, C. W. (2007) High-quality all-oxide Schottky junctions fabricated on heavily doped Nb:SrTiO3substrates. Physical Review B, 76 (7) doi:10.1103/physrevb.76.075122
Eizenberg, M., Callegari, A. C., Sadana, D. K., Hovel, H. J., Jackson, T. N. (1989) Enhanced Schottky barriers produced by recoil implantation of Mg inton‐GaAs. Applied Physics Letters, 54 (17). 1696-1698 doi:10.1063/1.101306
 
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