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Kwok, H. L., Wong, W. C. (1991) Damage effects in as-prepared recoil-implanted shallow p-n junctions. Journal of Materials Science, 26. 5703-5707 doi:10.1007/bf01130105

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Reference TypeJournal (article/letter/editorial)
TitleDamage effects in as-prepared recoil-implanted shallow p-n junctions
JournalJournal of Materials Science
AuthorsKwok, H. L.Author
Wong, W. C.Author
Year1991Volume26
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf01130105Search in ResearchGate
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Mindat Ref. ID9991122Long-form Identifiermindat:1:5:9991122:7
GUID0
Full ReferenceKwok, H. L., Wong, W. C. (1991) Damage effects in as-prepared recoil-implanted shallow p-n junctions. Journal of Materials Science, 26. 5703-5707 doi:10.1007/bf01130105
Plain TextKwok, H. L., Wong, W. C. (1991) Damage effects in as-prepared recoil-implanted shallow p-n junctions. Journal of Materials Science, 26. 5703-5707 doi:10.1007/bf01130105
In(n.d.) Journal of Materials Science Vol. 26. Springer Science and Business Media LLC

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Kwok, H. L., Lam, Y. W., Chu, W. C., Wong, S. P., Poon, M. C. (1986) P-n junctions and Schottky barriers formed by antimony recoil implantation. Journal of Materials Science Letters, 5 (8) 789-791 doi:10.1007/bf01730093
Kwok, H. L., Wong, S. C. (1989) Shallow Sb-doped Si surface layers formed by recoil implantation. Journal of Materials Science, 24. 1073-1076 doi:10.1007/bf01148801
Wong, W. C., Lam, Y. W., Kwok, H. L. (1987) Recoil implantation of aluminium into n-silicon. Journal of Materials Science Letters, 6 (5) 531-534 doi:10.1007/bf01739275
Kwok, H. L., Lam, Y. W., Wong, S. P., Poon, M. C. (1986) Mixing of phosphorus and antimony ions in silicon by recoil implantation. Journal of Materials Science Letters, 5 (6) 633-634 doi:10.1007/bf01731532
Paek, M. C., Im, H. B., Lee, J. Y. (1991) Effects of annealing on the damage morphologies in BF 2 + ion implanted (1 0 0) silicon. Journal of Materials Science, 26. 2603-2607 doi:10.1007/bf02387725
Baratte, H. (1991) Process Damage and Contamination Effects for Shallow Si Implanted GaAs. Journal of the Electrochemical Society, 138. 219pp. doi:10.1149/1.2085543
Kwok, H. L., Lam, Y. W. (1989) A study of CoSi x silicide formed by recoil implantation. Journal of Materials Science Letters, 8 (3) 364-366 doi:10.1007/bf00725525
MacIver, B. A. (1977) Damage Effects in Boron and BF[sub 2] Ion-Implanted p+-n Junctions in Silicon. Journal of the Electrochemical Society, 124. 273pp. doi:10.1149/1.2133278
Wong, K. H., Hau, S. K., Chan, P. W., Leung, L. K., Choy, C. L., Wong, H. K. (1991) XeCl excimer laser interaction with partially stabilized zirconia target. Journal of Materials Science Letters, 10 (14) 801-803 doi:10.1007/bf00724742
Clark, R. J., Harrison, L. L., Skirius, S. A., Wallace, W. J., Sullivan, M. L., Rebstock, J. (1991) Oxalate materials prepared by evaporation as precursors to superconducting ceramics. Journal of Materials Science, 26. 5883-5887 doi:10.1007/bf01130129
Wang, C., Liu, Y., Li, L., Tan, H. (2014) Anisotropic thermal conductivity of graphene wrinkles. Nanoscale, 6. 5703-5707 doi:10.1039/c4nr00423j
 
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