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Koelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W. (2011) Characteristics of cross-sectional atom probe analysis on semiconductor structures. Ultramicroscopy, 111 (6). 540-545 doi:10.1016/j.ultramic.2011.01.004

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristics of cross-sectional atom probe analysis on semiconductor structures
JournalUltramicroscopy
AuthorsKoelling, S.Author
Innocenti, N.Author
Hellings, G.Author
Gilbert, M.Author
Kambham, A.K.Author
De Meyer, K.Author
Vandervorst, W.Author
Year2011 (May)Volume111
Issue6
PublisherElsevier BV
DOIdoi:10.1016/j.ultramic.2011.01.004Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID4906938Long-form Identifiermindat:1:5:4906938:9
GUID0
Full ReferenceKoelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W. (2011) Characteristics of cross-sectional atom probe analysis on semiconductor structures. Ultramicroscopy, 111 (6). 540-545 doi:10.1016/j.ultramic.2011.01.004
Plain TextKoelling, S., Innocenti, N., Hellings, G., Gilbert, M., Kambham, A.K., De Meyer, K., Vandervorst, W. (2011) Characteristics of cross-sectional atom probe analysis on semiconductor structures. Ultramicroscopy, 111 (6). 540-545 doi:10.1016/j.ultramic.2011.01.004
In(2011, May) Ultramicroscopy Vol. 111 (6) Elsevier BV

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Gilbert, M., Vandervorst, W., Koelling, S., Kambham, A.K. (2011) Atom probe analysis of a 3D finFET with high-k metal gate. Ultramicroscopy, 111 (6). 530-534 doi:10.1016/j.ultramic.2010.12.025
Kambham, A.K., Mody, J., Gilbert, M., Koelling, S., Vandervorst, W. (2011) Atom-probe for FinFET dopant characterization. Ultramicroscopy, 111 (6). 535-539 doi:10.1016/j.ultramic.2011.01.017
Koelling, S., Innocenti, N., Bogdanowicz, J., Vandervorst, W. (2013) Optimal laser positioning for laser-assisted atom probe tomography. Ultramicroscopy, 132. 70-74 doi:10.1016/j.ultramic.2013.03.003
Koelling, S., Innocenti, N., Schulze, A., Gilbert, M., Kambham, A. K., Vandervorst, W. (2011) In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography. Journal of Applied Physics, 109 (10). 104909pp. doi:10.1063/1.3592339
Kambham, Ajay Kumar, Kumar, Arul, Gilbert, Matthieu, Vandervorst, Wilfried (2013) 3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography. Ultramicroscopy, 132. 65-69 doi:10.1016/j.ultramic.2012.09.013
Kumar, Arul, Komalan, Manu P., Lenka, Haraprasanna, Kambham, Ajay Kumar, Gilbert, Matthieu, Gencarelli, Federica, Vincent, Benjamin, Vandervorst, Wilfried (2013) Atomic insight into Ge1−xSnx using atom probe tomography. Ultramicroscopy, 132. 171-178 doi:10.1016/j.ultramic.2013.02.009
Kodzuka, M., Ohkubo, T., Hono, K. (2011) Laser assisted atom probe analysis of thin film on insulating substrate. Ultramicroscopy, 111 (6). 557-561 doi:10.1016/j.ultramic.2010.11.008
Kölling, S., Vandervorst, W. (2009) Failure mechanisms of silicon-based atom-probe tips. Ultramicroscopy, 109 (5). 486-491 doi:10.1016/j.ultramic.2008.11.013
Sonestedt, M., Stiller, K. (2011) Using atom probe tomography to analyse MAX-phase materials. Ultramicroscopy, 111 (6). 642-647 doi:10.1016/j.ultramic.2010.12.031
Chen, Y.M., Ohkubo, T, Hono, K (2011) Laser assisted field evaporation of oxides in atom probe analysis. Ultramicroscopy, 111 (6). 562-566 doi:10.1016/j.ultramic.2010.12.013
Saxey, D.W. (2011) Correlated ion analysis and the interpretation of atom probe mass spectra. Ultramicroscopy, 111 (6). 473-479 doi:10.1016/j.ultramic.2010.11.021
 
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