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Pihlstrom, B. G., Sheng, T. Y., Yu, Z., Collins, G. J. (1991) Plasma‐assisted decomposition of trimethylarsine. Journal of Applied Physics, 70 (6). 3329-3332 doi:10.1063/1.349266

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Reference TypeJournal (article/letter/editorial)
TitlePlasma‐assisted decomposition of trimethylarsine
JournalJournal of Applied Physics
AuthorsPihlstrom, B. G.Author
Sheng, T. Y.Author
Yu, Z.Author
Collins, G. J.Author
Year1991 (September 15)Volume70
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.349266Search in ResearchGate
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Mindat Ref. ID5055497Long-form Identifiermindat:1:5:5055497:1
GUID0
Full ReferencePihlstrom, B. G., Sheng, T. Y., Yu, Z., Collins, G. J. (1991) Plasma‐assisted decomposition of trimethylarsine. Journal of Applied Physics, 70 (6). 3329-3332 doi:10.1063/1.349266
Plain TextPihlstrom, B. G., Sheng, T. Y., Yu, Z., Collins, G. J. (1991) Plasma‐assisted decomposition of trimethylarsine. Journal of Applied Physics, 70 (6). 3329-3332 doi:10.1063/1.349266
In(1991, September) Journal of Applied Physics Vol. 70 (6) AIP Publishing

See Also

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Sheng, T., Pihlstrom, B., Yu, Z., Collins, G. J. (1989) Decomposition of trimethylgallium in the downstream region of a near afterglow plasma. Applied Physics Letters, 55 (23). 2411-2413 doi:10.1063/1.102030
Pihlstrom, B. G., Sheng, T. Y., Thompson, L. R., Collins, G. J. (1992) Organometallic vapor‐phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region. Applied Physics Letters, 60 (25). 3144-3146 doi:10.1063/1.106750
Sheng, T. Y., Yu, Z. Q., Collins, G. J. (1988) Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride. Applied Physics Letters, 52 (7). 576-578 doi:10.1063/1.99398
Yu, Z., Sheng, T. Y., Luo, Z., Collins, G. J. (1990) Wide area disk‐shaped vacuum ultraviolet lamp. Applied Physics Letters, 57 (18). 1873-1875 doi:10.1063/1.104020
Henry, A., Monemar, B., Lindström, J. L., Bestwick, T. D., Oehrlein, G. S. (1991) Photoluminescence characterization of plasma exposed silicon surfaces. Journal of Applied Physics, 70 (10). 5597-5603 doi:10.1063/1.350172
Shen, H. Y., Zhou, Y. P., Zeng, R. R., Yu, G. F., Huang, C. H., Zeng, Z. D., Zhang, W. J., Lin, W. X., Ye, Q. J. (1991) Laser action of Nd:YAlO3 at 1300 nm. Journal of Applied Physics, 70 (6). 3373-3375 doi:10.1063/1.349277
Thompson, L. R., Collins, G. J., Doyle, B. L., Knapp, J. A. (1991) X‐ray‐diffraction characterization of silicon‐on‐insulator films. Journal of Applied Physics, 70 (9). 4760-4769 doi:10.1063/1.349068
Williams, R. K., Alexander, K. B., Brynestad, J., Henson, T. J., Kroeger, D. M., Lindemer, T. B., Marsh, G. C., Scarbrough, J. O., Specht, E. D. (1991) Oxidation induced decomposition of YBa2Cu3O7−x. Journal of Applied Physics, 70 (2). 906-913 doi:10.1063/1.349597
Yacobi, B. G., Badzian, A. R., Badzian, T. (1991) Cathodoluminescence study of diamond films grown by microwave plasma assisted chemical vapor deposition. Journal of Applied Physics, 69 (3). 1643-1647 doi:10.1063/1.347261
Zarnani, H., Yu, Z. Q., Collins, G. J., Bhattacharya, E., Pankove, J. I. (1988) Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon. Applied Physics Letters, 53 (14). 1314-1316 doi:10.1063/1.100007
Prince, E. T. (1991) Intrinsic stress in hydrogenated amorphous carbon prepared by rf plasma decomposition of methane. Journal of Applied Physics, 70 (9). 4903-4908 doi:10.1063/1.349035
 
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