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Sheng, T. Y., Yu, Z. Q., Collins, G. J. (1988) Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride. Applied Physics Letters, 52 (7). 576-578 doi:10.1063/1.99398

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Reference TypeJournal (article/letter/editorial)
TitleDisk hydrogen plasma assisted chemical vapor deposition of aluminum nitride
JournalApplied Physics Letters
AuthorsSheng, T. Y.Author
Yu, Z. Q.Author
Collins, G. J.Author
Year1988 (February 15)Volume52
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.99398Search in ResearchGate
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Mindat Ref. ID8483785Long-form Identifiermindat:1:5:8483785:1
GUID0
Full ReferenceSheng, T. Y., Yu, Z. Q., Collins, G. J. (1988) Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride. Applied Physics Letters, 52 (7). 576-578 doi:10.1063/1.99398
Plain TextSheng, T. Y., Yu, Z. Q., Collins, G. J. (1988) Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride. Applied Physics Letters, 52 (7). 576-578 doi:10.1063/1.99398
In(1988, February) Applied Physics Letters Vol. 52 (7) AIP Publishing

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Zarnani, H., Yu, Z. Q., Collins, G. J., Bhattacharya, E., Pankove, J. I. (1988) Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon. Applied Physics Letters, 53 (14). 1314-1316 doi:10.1063/1.100007
Pihlstrom, B. G., Sheng, T. Y., Yu, Z., Collins, G. J. (1991) Plasma‐assisted decomposition of trimethylarsine. Journal of Applied Physics, 70 (6). 3329-3332 doi:10.1063/1.349266
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Pihlstrom, B. G., Sheng, T. Y., Thompson, L. R., Collins, G. J. (1992) Organometallic vapor‐phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region. Applied Physics Letters, 60 (25). 3144-3146 doi:10.1063/1.106750
Singh, B., Mesker, O. R., Levine, A. W., Arie, Y. (1988) Hollow cathode plasma assisted chemical vapor deposition of diamond. Applied Physics Letters, 52 (20). 1658-1660 doi:10.1063/1.99049
Ying, Q. Y., Shaw, D. T., Kwok, H. S. (1988) Spectroscopic study of plasma‐assisted laser deposition of Y‐Ba‐Cu‐O. Applied Physics Letters, 53 (18). 1762-1764 doi:10.1063/1.100477
Ma, Y., Yasuda, T., Lucovsky, G. (1994) Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition. Applied Physics Letters, 64 (17). 2226-2228 doi:10.1063/1.111681
Nagata, T., Haemori, M., Sakuma, Y., Chikyow, T., Anzai, J., Uehara, T. (2009) Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth. Journal of Applied Physics, 105 (6). 66106pp. doi:10.1063/1.3086715
Sheng, T., Pihlstrom, B., Yu, Z., Collins, G. J. (1989) Decomposition of trimethylgallium in the downstream region of a near afterglow plasma. Applied Physics Letters, 55 (23). 2411-2413 doi:10.1063/1.102030
Bai, G. R., Tao, W., Wang, R., Xie, L. M., Zhang, X. K., Huang, J., Qian, C. T., Zhou, W. K., Ye, C. Q., Ren, J. G., Li, Y. Q., Luo, W. M., Chen, J. B. (1989) Preparation of Y‐Ba‐Cu‐O highTcsuperconducting thin films by plasma‐assisted organometallic chemical vapor deposition. Applied Physics Letters, 55 (2). 194-196 doi:10.1063/1.102404
Jousse, D., Kanicki, J., Krick, D. T., Lenahan, P. M. (1988) Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 52 (6). 445-447 doi:10.1063/1.99438
 
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