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Mitra, J., Feng, L., Peñate-Quesada, L., Dawson, P. (2015) An alternative methodology in Schottky diode physics. Journal of Applied Physics, 117 (24). 244501pp. doi:10.1063/1.4922974

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Reference TypeJournal (article/letter/editorial)
TitleAn alternative methodology in Schottky diode physics
JournalJournal of Applied Physics
AuthorsMitra, J.Author
Feng, L.Author
Peñate-Quesada, L.Author
Dawson, P.Author
Year2015 (June 28)Volume117
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.4922974Search in ResearchGate
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Mindat Ref. ID5202034Long-form Identifiermindat:1:5:5202034:4
GUID0
Full ReferenceMitra, J., Feng, L., Peñate-Quesada, L., Dawson, P. (2015) An alternative methodology in Schottky diode physics. Journal of Applied Physics, 117 (24). 244501pp. doi:10.1063/1.4922974
Plain TextMitra, J., Feng, L., Peñate-Quesada, L., Dawson, P. (2015) An alternative methodology in Schottky diode physics. Journal of Applied Physics, 117 (24). 244501pp. doi:10.1063/1.4922974
In(2015, June) Journal of Applied Physics Vol. 117 (24) AIP Publishing

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Dawson, P, Feng, L, Penate-Quesada, L, Mitra, J, Hill, G (2011) The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode—rectifying an oversight in Schottky diode investigation. Journal of Physics D: Applied Physics, 44. 125101pp. doi:10.1088/0022-3727/44/12/125101
Feng, Lei, Mitra, J, Dawson, P, Hill, G (2011) High sensitivity (1 ppm) hydrogen detection using an unconventional Pd/n-InP Schottky device. Journal of Physics: Condensed Matter, 23 (42). 422201pp. doi:10.1088/0953-8984/23/42/422201
Bhattacharya, Gourab, Venimadhav, A (2022) An alternative approach to extract diode parameters from metal–semiconductor–metal asymmetric Schottky diodes. Journal of Physics D: Applied Physics, 55 (43) 435101 doi:10.1088/1361-6463/ac85ff
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Sporea, R. A., Overy, M., Shannon, J. M., Silva, S. R. P. (2015) Temperature dependence of the current in Schottky-barrier source-gated transistors. Journal of Applied Physics, 117 (18). 184502pp. doi:10.1063/1.4921114
Bishop, C., Salvestrini, J. P., Halfaya, Y., Sundaram, S., El Gmili, Y., Pradere, L., Marteau, J. Y., Assouar, M. B., Voss, P. L., Ougazzaden, A. (2015) Highly sensitive detection of NO2gas using BGaN/GaN superlattice-based double Schottky junction sensors. Applied Physics Letters, 106 (24). 243504pp. doi:10.1063/1.4922803
Chang, L. L., Esaki, L., Stiles, P. J. (1968) GeTe–GaAs Tunnel Junction: A Negative‐Resistance Schottky‐Type Barrier. Journal of Applied Physics, 39 (13). 6049-6051 doi:10.1063/1.1656114
Manifacier, J.‐C., Brortryb, N., Ardebili, R., Charles, J.‐P. (1988) Schottky diode: Comments concerning the diode parameters determination from the forward I‐V plot. Journal of Applied Physics, 64 (5). 2502-2504 doi:10.1063/1.341632
Pandey, A., Gim, J., Hovden, R., Mi, Z. (2020) An AlGaN tunnel junction light emitting diode operating at 255 nm. Applied Physics Letters, 117 (24) 241101pp. doi:10.1063/5.0036286
Morris, I. L., Williams, R. H., Davies, J. I., Clarke, G. J. (1993) Measurement of conduction band offsets through Schottky diode transport measurements. Applied Physics Letters, 62 (3). 291-293 doi:10.1063/1.108994
 
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