Feng, Qian, Xing, Tao, Wang, Qiang, Feng, Qing, Li, Qian, Bi, Zhi-Wei, Zhang, Jin-Cheng, Hao, Yue (2012) A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. Chinese Physics B, 21. 17304pp. doi:10.1088/1674-1056/21/1/017304
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric | ||
| Journal | Chinese Physics B | ||
| Authors | Feng, Qian | Author | |
| Xing, Tao | Author | ||
| Wang, Qiang | Author | ||
| Feng, Qing | Author | ||
| Li, Qian | Author | ||
| Bi, Zhi-Wei | Author | ||
| Zhang, Jin-Cheng | Author | ||
| Hao, Yue | Author | ||
| Year | 2012 (January) | Volume | 21 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/21/1/017304Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6001851 | Long-form Identifier | mindat:1:5:6001851:1 |
| GUID | 0 | ||
| Full Reference | Feng, Qian, Xing, Tao, Wang, Qiang, Feng, Qing, Li, Qian, Bi, Zhi-Wei, Zhang, Jin-Cheng, Hao, Yue (2012) A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. Chinese Physics B, 21. 17304pp. doi:10.1088/1674-1056/21/1/017304 | ||
| Plain Text | Feng, Qian, Xing, Tao, Wang, Qiang, Feng, Qing, Li, Qian, Bi, Zhi-Wei, Zhang, Jin-Cheng, Hao, Yue (2012) A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. Chinese Physics B, 21. 17304pp. doi:10.1088/1674-1056/21/1/017304 | ||
| In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing | ||
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