Zhi-Wei, Bi, Qian, Feng, Yue, Hao, Dang-Hui, Wang, Xiao-Hua, Ma, Jin-Cheng, Zhang, Si, Quan, Sheng-Rui, Xu (2010) AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition. Chinese Physics B, 19. 77303pp. doi:10.1088/1674-1056/19/7/077303
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition | ||
| Journal | Chinese Physics B | ||
| Authors | Zhi-Wei, Bi | Author | |
| Qian, Feng | Author | ||
| Yue, Hao | Author | ||
| Dang-Hui, Wang | Author | ||
| Xiao-Hua, Ma | Author | ||
| Jin-Cheng, Zhang | Author | ||
| Si, Quan | Author | ||
| Sheng-Rui, Xu | Author | ||
| Year | 2010 (July) | Volume | 19 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/19/7/077303Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6000512 | Long-form Identifier | mindat:1:5:6000512:8 |
| GUID | 0 | ||
| Full Reference | Zhi-Wei, Bi, Qian, Feng, Yue, Hao, Dang-Hui, Wang, Xiao-Hua, Ma, Jin-Cheng, Zhang, Si, Quan, Sheng-Rui, Xu (2010) AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition. Chinese Physics B, 19. 77303pp. doi:10.1088/1674-1056/19/7/077303 | ||
| Plain Text | Zhi-Wei, Bi, Qian, Feng, Yue, Hao, Dang-Hui, Wang, Xiao-Hua, Ma, Jin-Cheng, Zhang, Si, Quan, Sheng-Rui, Xu (2010) AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition. Chinese Physics B, 19. 77303pp. doi:10.1088/1674-1056/19/7/077303 | ||
| In | (n.d.) Chinese Physics B Vol. 19. IOP Publishing | ||
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