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Wen, Hui-Juan, Zhang, Jin-Cheng, Lu, Xiao-Li, Wang, Zhi-Zhe, Ha, Wei, Ge, Sha-Sha, Cao, Rong-Tao, Hao, Yue (2014) Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer. Chinese Physics B, 23. 37302pp. doi:10.1088/1674-1056/23/3/037302

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Reference TypeJournal (article/letter/editorial)
TitleImproved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
JournalChinese Physics B
AuthorsWen, Hui-JuanAuthor
Zhang, Jin-ChengAuthor
Lu, Xiao-LiAuthor
Wang, Zhi-ZheAuthor
Ha, WeiAuthor
Ge, Sha-ShaAuthor
Cao, Rong-TaoAuthor
Hao, YueAuthor
Year2014 (March)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/3/037302Search in ResearchGate
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Mindat Ref. ID6004763Long-form Identifiermindat:1:5:6004763:8
GUID0
Full ReferenceWen, Hui-Juan, Zhang, Jin-Cheng, Lu, Xiao-Li, Wang, Zhi-Zhe, Ha, Wei, Ge, Sha-Sha, Cao, Rong-Tao, Hao, Yue (2014) Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer. Chinese Physics B, 23. 37302pp. doi:10.1088/1674-1056/23/3/037302
Plain TextWen, Hui-Juan, Zhang, Jin-Cheng, Lu, Xiao-Li, Wang, Zhi-Zhe, Ha, Wei, Ge, Sha-Sha, Cao, Rong-Tao, Hao, Yue (2014) Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer. Chinese Physics B, 23. 37302pp. doi:10.1088/1674-1056/23/3/037302
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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