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Ji, Dong, Liu, Bing, Lu, Yan-Wu, Zou, Miao, Fan, Bo-Ling (2012) Influence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors. Chinese Physics B, 21. 67201pp. doi:10.1088/1674-1056/21/6/067201

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors
JournalChinese Physics B
AuthorsJi, DongAuthor
Liu, BingAuthor
Lu, Yan-WuAuthor
Zou, MiaoAuthor
Fan, Bo-LingAuthor
Year2012 (June)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/6/067201Search in ResearchGate
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Mindat Ref. ID6002606Long-form Identifiermindat:1:5:6002606:0
GUID0
Full ReferenceJi, Dong, Liu, Bing, Lu, Yan-Wu, Zou, Miao, Fan, Bo-Ling (2012) Influence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors. Chinese Physics B, 21. 67201pp. doi:10.1088/1674-1056/21/6/067201
Plain TextJi, Dong, Liu, Bing, Lu, Yan-Wu, Zou, Miao, Fan, Bo-Ling (2012) Influence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors. Chinese Physics B, 21. 67201pp. doi:10.1088/1674-1056/21/6/067201
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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