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Qin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2013) The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor. Chinese Physics B, 22. 107104pp. doi:10.1088/1674-1056/22/10/107104

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Reference TypeJournal (article/letter/editorial)
TitleThe effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
JournalChinese Physics B
AuthorsQin, Jie-YuAuthor
Du, GangAuthor
Liu, Xiao-YanAuthor
Year2013 (October)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/10/107104Search in ResearchGate
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Mindat Ref. ID6003111Long-form Identifiermindat:1:5:6003111:4
GUID0
Full ReferenceQin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2013) The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor. Chinese Physics B, 22. 107104pp. doi:10.1088/1674-1056/22/10/107104
Plain TextQin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2013) The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor. Chinese Physics B, 22. 107104pp. doi:10.1088/1674-1056/22/10/107104
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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