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Qin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2014) Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement. Chinese Physics B, 23. 108501pp. doi:10.1088/1674-1056/23/10/108501

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement
JournalChinese Physics B
AuthorsQin, Jie-YuAuthor
Du, GangAuthor
Liu, Xiao-YanAuthor
Year2014 (October)Volume23
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/23/10/108501Search in ResearchGate
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Mindat Ref. ID6004372Long-form Identifiermindat:1:5:6004372:0
GUID0
Full ReferenceQin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2014) Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement. Chinese Physics B, 23. 108501pp. doi:10.1088/1674-1056/23/10/108501
Plain TextQin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2014) Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement. Chinese Physics B, 23. 108501pp. doi:10.1088/1674-1056/23/10/108501
In(n.d.) Chinese Physics B Vol. 23. IOP Publishing

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