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Zhang, Xian-Le, Chang, Peng-Ying, Du, Gang, Liu, Xiao-Yan (2020) Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs. Chinese Physics B, 29. 38505pp. doi:10.1088/1674-1056/ab6966

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Reference TypeJournal (article/letter/editorial)
TitleRole of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
JournalChinese Physics B
AuthorsZhang, Xian-LeAuthor
Chang, Peng-YingAuthor
Du, GangAuthor
Liu, Xiao-YanAuthor
Year2020 (February)Volume29
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/ab6966Search in ResearchGate
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Mindat Ref. ID6010714Long-form Identifiermindat:1:5:6010714:3
GUID0
Full ReferenceZhang, Xian-Le, Chang, Peng-Ying, Du, Gang, Liu, Xiao-Yan (2020) Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs. Chinese Physics B, 29. 38505pp. doi:10.1088/1674-1056/ab6966
Plain TextZhang, Xian-Le, Chang, Peng-Ying, Du, Gang, Liu, Xiao-Yan (2020) Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs. Chinese Physics B, 29. 38505pp. doi:10.1088/1674-1056/ab6966
In(n.d.) Chinese Physics B Vol. 29. IOP Publishing

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Qin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2014) Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement. Chinese Physics B, 23. 108501pp. doi:10.1088/1674-1056/23/10/108501
Min, Ji, Kai, Zhao, Gang, Du, Jin-Feng, Kang, Ru-Qi, Han, Xiao-Yan, Liu (2008) Quantum mechanical effects on heat generation in nano-scale MOSFETs. Chinese Physics B, 17. 1869-1873 doi:10.1088/1674-1056/17/5/054
Gang, Du, Xiao-Yan, Liu, Zhi-Liang, Xia, Jing-Feng, Yang, Ru-Qi, Han (2010) Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method. Chinese Physics B, 19. 57304pp. doi:10.1088/1674-1056/19/5/057304
Xue, Bai-Qing, Wang, Sheng-Kai, Han, Le, Chang, Hu-Dong, Sun, Bing, Zhao, Wei, Liu, Hong-Gang (2013) High-mobility germanium p-MOSFETs by using HCl and (NH 4 ) 2 S surface passivation. Chinese Physics B, 22. 107302pp. doi:10.1088/1674-1056/22/10/107302
Qin, Jie-Yu, Du, Gang, Liu, Xiao-Yan (2013) The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor. Chinese Physics B, 22. 107104pp. doi:10.1088/1674-1056/22/10/107104
Xiao, Yang, Ye, Qiaoli, Liang, Jintao, Yan, Xiaohong, Zhang, Ying (2020) Different noncollinear magnetizations on two edges of zigzag graphene nanoribbons*. Chinese Physics B, 29 (12) 127201pp. doi:10.1088/1674-1056/abc0e4
Peng, Ya-Hua, Liu, Xiao-Yan, Du, Gang, Liu, Fei, Jin, Rui, Kang, Jin-Feng (2012) The influence of thermally assisted tunneling on the performance of charge trapping memory. Chinese Physics B, 21. 78501pp. doi:10.1088/1674-1056/21/7/078501
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Dai, Li-Hua, Bi, Da-Wei, Hu, Zhi-Yuan, Liu, Xiao-Nian, Zhang, Meng-Ying, Zhang, Zheng-Xuan, Zou, Shi-Chang (2018) Research on the radiation hardened SOI devices with single-step Si ion implantation. Chinese Physics B, 27. 48503pp. doi:10.1088/1674-1056/27/4/048503
 
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