| Reference Type | Journal (article/letter/editorial) |
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| Title | Gate-to-body tunneling current model for silicon-on-insulator MOSFETs |
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| Journal | Chinese Physics B |
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| Authors | Wu, Qing-Qing | Author |
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| Chen, Jing | Author |
| Luo, Jie-Xin | Author |
| Lü, Kai | Author |
| Yu, Tao | Author |
| Chai, Zhan | Author |
| Wang, Xi | Author |
| Year | 2013 (October) | Volume | 22 |
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| Publisher | IOP Publishing |
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| DOI | doi:10.1088/1674-1056/22/10/108501Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 6003140 | Long-form Identifier | mindat:1:5:6003140:6 |
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|
| GUID | 0 |
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| Full Reference | Wu, Qing-Qing, Chen, Jing, Luo, Jie-Xin, Lü, Kai, Yu, Tao, Chai, Zhan, Wang, Xi (2013) Gate-to-body tunneling current model for silicon-on-insulator MOSFETs. Chinese Physics B, 22. 108501pp. doi:10.1088/1674-1056/22/10/108501 |
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| Plain Text | Wu, Qing-Qing, Chen, Jing, Luo, Jie-Xin, Lü, Kai, Yu, Tao, Chai, Zhan, Wang, Xi (2013) Gate-to-body tunneling current model for silicon-on-insulator MOSFETs. Chinese Physics B, 22. 108501pp. doi:10.1088/1674-1056/22/10/108501 |
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| In | (n.d.) Chinese Physics B Vol. 22. IOP Publishing |
|---|
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