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Li, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs. Chinese Physics B, 22. 29401pp. doi:10.1088/1674-1056/22/2/029401

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Reference TypeJournal (article/letter/editorial)
TitleThe temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs
JournalChinese Physics B
AuthorsLi, Da-WeiAuthor
Qin, Jun-RuiAuthor
Chen, Shu-MingAuthor
Year2013 (February)Volume22
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/22/2/029401Search in ResearchGate
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Mindat Ref. ID6003451Long-form Identifiermindat:1:5:6003451:9
GUID0
Full ReferenceLi, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs. Chinese Physics B, 22. 29401pp. doi:10.1088/1674-1056/22/2/029401
Plain TextLi, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The temperature dependence of single-event transients in 90-nm CMOS dual-well and triple-well NMOSFETs. Chinese Physics B, 22. 29401pp. doi:10.1088/1674-1056/22/2/029401
In(n.d.) Chinese Physics B Vol. 22. IOP Publishing

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Qin, Jun-Rui, Chen, Shu-Ming, Liang, Bin, Liu, Bi-Wei (2012) Recovery of single event upset in advanced complementary metal—oxide semiconductor static random access memory cells. Chinese Physics B, 21. 29401pp. doi:10.1088/1674-1056/21/2/029401
Qin, Jun-Rui, Chen, Shu-Ming, Li, Da-Wei, Liang, Bin, Liu, Bi-Wei (2012) Temperature and drain bias dependence of single event transient in 25-nm FinFET technology. Chinese Physics B, 21. 89401pp. doi:10.1088/1674-1056/21/8/089401
Li, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells. Chinese Physics B, 22. 29402pp. doi:10.1088/1674-1056/22/2/029402
Liu, Zheng, Chen, Shu-Ming, Chen, Jian-Jun, Qin, Jun-Rui, Liu, Rong-Rong (2012) Parasitic bipolar amplification in a single event transient and its temperature dependence. Chinese Physics B, 21. 99401pp. doi:10.1088/1674-1056/21/9/099401
Guo, Yang, Chen, Jian-Jun, He, Yi-Bai, Liang, Bin, Liu, Bi-Wei (2013) The dual role of multiple-transistor charge sharing collection in single-event transients. Chinese Physics B, 22. 46103pp. doi:10.1088/1674-1056/22/4/046103
Wang, Tao, Chen, Li, Dinh, Anh, Bhuva, Bharat (2009) Single-Event Transients Effects on Dynamic Comparators in a 90 nm CMOS Triple-Well and Dual-Well Technology. IEEE Transactions on Nuclear Science, 56 (6) 3556-3560 doi:10.1109/tns.2009.2033920
Qin, Jun-Rui, Chen, Shu-Ming, Liu, Bi-Wei, Liu, Zheng, Liang, Bin, Du, Yan-Kang (2011) The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology. Chinese Physics B, 20. 129401pp. doi:10.1088/1674-1056/20/12/129401
Chen, Shu-Ming, Chen, Jian-Jun (2012) Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain. Chinese Physics B, 21. 16104pp. doi:10.1088/1674-1056/21/1/016104
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He, Yi-Bai, Chen, Shu-Ming (2014) Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients. Chinese Physics B, 23. 79401pp. doi:10.1088/1674-1056/23/7/079401
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