Qin, Jun-Rui, Chen, Shu-Ming, Li, Da-Wei, Liang, Bin, Liu, Bi-Wei (2012) Temperature and drain bias dependence of single event transient in 25-nm FinFET technology. Chinese Physics B, 21. 89401pp. doi:10.1088/1674-1056/21/8/089401
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Temperature and drain bias dependence of single event transient in 25-nm FinFET technology | ||
| Journal | Chinese Physics B | ||
| Authors | Qin, Jun-Rui | Author | |
| Chen, Shu-Ming | Author | ||
| Li, Da-Wei | Author | ||
| Liang, Bin | Author | ||
| Liu, Bi-Wei | Author | ||
| Year | 2012 (August) | Volume | 21 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/21/8/089401Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6002834 | Long-form Identifier | mindat:1:5:6002834:1 |
| GUID | 0 | ||
| Full Reference | Qin, Jun-Rui, Chen, Shu-Ming, Li, Da-Wei, Liang, Bin, Liu, Bi-Wei (2012) Temperature and drain bias dependence of single event transient in 25-nm FinFET technology. Chinese Physics B, 21. 89401pp. doi:10.1088/1674-1056/21/8/089401 | ||
| Plain Text | Qin, Jun-Rui, Chen, Shu-Ming, Li, Da-Wei, Liang, Bin, Liu, Bi-Wei (2012) Temperature and drain bias dependence of single event transient in 25-nm FinFET technology. Chinese Physics B, 21. 89401pp. doi:10.1088/1674-1056/21/8/089401 | ||
| In | (n.d.) Chinese Physics B Vol. 21. IOP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
