Jin, Xiao-Ming, Chen, Wei, Li, Jun-Lin, Qi, Chao, Guo, Xiao-Qiang, Li, Rui-Bin, Liu, Yan (2019) Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons. Chinese Physics B, 28. 104212pp. doi:10.1088/1674-1056/ab4175
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons | ||
| Journal | Chinese Physics B | ||
| Authors | Jin, Xiao-Ming | Author | |
| Chen, Wei | Author | ||
| Li, Jun-Lin | Author | ||
| Qi, Chao | Author | ||
| Guo, Xiao-Qiang | Author | ||
| Li, Rui-Bin | Author | ||
| Liu, Yan | Author | ||
| Year | 2019 (October) | Volume | 28 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/ab4175Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6009886 | Long-form Identifier | mindat:1:5:6009886:3 |
| GUID | 0 | ||
| Full Reference | Jin, Xiao-Ming, Chen, Wei, Li, Jun-Lin, Qi, Chao, Guo, Xiao-Qiang, Li, Rui-Bin, Liu, Yan (2019) Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons. Chinese Physics B, 28. 104212pp. doi:10.1088/1674-1056/ab4175 | ||
| Plain Text | Jin, Xiao-Ming, Chen, Wei, Li, Jun-Lin, Qi, Chao, Guo, Xiao-Qiang, Li, Rui-Bin, Liu, Yan (2019) Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons. Chinese Physics B, 28. 104212pp. doi:10.1088/1674-1056/ab4175 | ||
| In | (n.d.) Chinese Physics B Vol. 28. IOP Publishing | ||
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