Li, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells. Chinese Physics B, 22. 29402pp. doi:10.1088/1674-1056/22/2/029402
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells | ||
| Journal | Chinese Physics B | ||
| Authors | Li, Da-Wei | Author | |
| Qin, Jun-Rui | Author | ||
| Chen, Shu-Ming | Author | ||
| Year | 2013 (February) | Volume | 22 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/22/2/029402Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6003452 | Long-form Identifier | mindat:1:5:6003452:8 |
| GUID | 0 | ||
| Full Reference | Li, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells. Chinese Physics B, 22. 29402pp. doi:10.1088/1674-1056/22/2/029402 | ||
| Plain Text | Li, Da-Wei, Qin, Jun-Rui, Chen, Shu-Ming (2013) The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells. Chinese Physics B, 22. 29402pp. doi:10.1088/1674-1056/22/2/029402 | ||
| In | (n.d.) Chinese Physics B Vol. 22. IOP Publishing | ||
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