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Theodore Chandra, S., Balamurugan, N. B., Lakshmi Priya, G., Manikandan, S. (2015) Subthreshold behavior of AlInSb/InSb high electron mobility transistors. Chinese Physics B, 24. 76105pp. doi:10.1088/1674-1056/24/7/076105

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Reference TypeJournal (article/letter/editorial)
TitleSubthreshold behavior of AlInSb/InSb high electron mobility transistors
JournalChinese Physics B
AuthorsTheodore Chandra, S.Author
Balamurugan, N. B.Author
Lakshmi Priya, G.Author
Manikandan, S.Author
Year2015 (July)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/7/076105Search in ResearchGate
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Mindat Ref. ID6006370Long-form Identifiermindat:1:5:6006370:6
GUID0
Full ReferenceTheodore Chandra, S., Balamurugan, N. B., Lakshmi Priya, G., Manikandan, S. (2015) Subthreshold behavior of AlInSb/InSb high electron mobility transistors. Chinese Physics B, 24. 76105pp. doi:10.1088/1674-1056/24/7/076105
Plain TextTheodore Chandra, S., Balamurugan, N. B., Lakshmi Priya, G., Manikandan, S. (2015) Subthreshold behavior of AlInSb/InSb high electron mobility transistors. Chinese Physics B, 24. 76105pp. doi:10.1088/1674-1056/24/7/076105
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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