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Yu, Jie, Chen, Kun-ji, Ma, Zhong-yuan, Zhang, Xin-xin, Jiang, Xiao-fan, Wu, Yang-qing, Huang, Xin-fan, Oda, Shunri (2016) Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices. Chinese Physics B, 25. 97304pp. doi:10.1088/1674-1056/25/9/097304

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Reference TypeJournal (article/letter/editorial)
TitleScaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices
JournalChinese Physics B
AuthorsYu, JieAuthor
Chen, Kun-jiAuthor
Ma, Zhong-yuanAuthor
Zhang, Xin-xinAuthor
Jiang, Xiao-fanAuthor
Wu, Yang-qingAuthor
Huang, Xin-fanAuthor
Oda, ShunriAuthor
Year2016 (September)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/9/097304Search in ResearchGate
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Mindat Ref. ID6007686Long-form Identifiermindat:1:5:6007686:1
GUID0
Full ReferenceYu, Jie, Chen, Kun-ji, Ma, Zhong-yuan, Zhang, Xin-xin, Jiang, Xiao-fan, Wu, Yang-qing, Huang, Xin-fan, Oda, Shunri (2016) Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices. Chinese Physics B, 25. 97304pp. doi:10.1088/1674-1056/25/9/097304
Plain TextYu, Jie, Chen, Kun-ji, Ma, Zhong-yuan, Zhang, Xin-xin, Jiang, Xiao-fan, Wu, Yang-qing, Huang, Xin-fan, Oda, Shunri (2016) Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices. Chinese Physics B, 25. 97304pp. doi:10.1088/1674-1056/25/9/097304
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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