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Cao, Yan-Rong, Yang, Yi, Cao, Cheng, He, Wen-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2015) Recovery of PMOSFET NBTI under different conditions. Chinese Physics B, 24. 97304pp. doi:10.1088/1674-1056/24/9/097304

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Reference TypeJournal (article/letter/editorial)
TitleRecovery of PMOSFET NBTI under different conditions
JournalChinese Physics B
AuthorsCao, Yan-RongAuthor
Yang, YiAuthor
Cao, ChengAuthor
He, Wen-LongAuthor
Zheng, Xue-FengAuthor
Ma, Xiao-HuaAuthor
Hao, YueAuthor
Year2015 (September)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/9/097304Search in ResearchGate
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Mindat Ref. ID6006605Long-form Identifiermindat:1:5:6006605:9
GUID0
Full ReferenceCao, Yan-Rong, Yang, Yi, Cao, Cheng, He, Wen-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2015) Recovery of PMOSFET NBTI under different conditions. Chinese Physics B, 24. 97304pp. doi:10.1088/1674-1056/24/9/097304
Plain TextCao, Yan-Rong, Yang, Yi, Cao, Cheng, He, Wen-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Hao, Yue (2015) Recovery of PMOSFET NBTI under different conditions. Chinese Physics B, 24. 97304pp. doi:10.1088/1674-1056/24/9/097304
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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